Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. This two-volume edition records the written versions of 364 contributed papers and 26 invited talks, presented at the Tenth International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), held in Lyon, France, from the 5th to the 10th October, 2003. A total of 19 different countries were represented. These proceedings give the latest overview of the fundamental topics which currently drive the development of a competitive SiC technology. They cover bulk and epitaxial growth, the properties of the resultant substrates and layers, and the processing issues involved in developing SiC electronic devices applications.
Description du livre Trans Tech Publications, Ltd., 2004. État : Good. Shows some signs of wear, and may have some markings on the inside. N° de réf. du libraire GRP96454861
Description du livre Trans Tech Pubn, 2004. Hardcover. État : As New. As New. book. N° de réf. du libraire F5S5-2-Z-0878499431-5