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Description du livre Etat : New. N° de réf. du vendeur 20266309-n
Description du livre Hardcover. Etat : new. N° de réf. du vendeur 9783319011646
Description du livre Etat : New. N° de réf. du vendeur ABLIING23Mar3113020085945
Description du livre Etat : New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book. N° de réf. du vendeur ria9783319011646_lsuk
Description du livre Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. 216 pp. Englisch. N° de réf. du vendeur 9783319011646
Description du livre Etat : New. N° de réf. du vendeur 20266309-n
Description du livre Gebunden. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFETExplains the design of RF switches using the technologies presented and simulates s. N° de réf. du vendeur 4496070
Description du livre Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. N° de réf. du vendeur 9783319011646
Description du livre Etat : New. MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch Series: Analog Circuits and Signal Processing. Num Pages: 214 pages, 10 black & white illustrations, 45 colour illustrations, 22 black & white tables, biograp. BIC Classification: TJFC; TJFD5; TJK. Category: (P) Professional & Vocational. Dimension: 239 x 165 x 15. Weight in Grams: 450. . 2013. 2014th Edition. Hardcover. . . . . N° de réf. du vendeur V9783319011646
Description du livre Etat : New. MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch Series: Analog Circuits and Signal Processing. Num Pages: 214 pages, 10 black & white illustrations, 45 colour illustrations, 22 black & white tables, biograp. BIC Classification: TJFC; TJFD5; TJK. Category: (P) Professional & Vocational. Dimension: 239 x 165 x 15. Weight in Grams: 450. . 2013. 2014th Edition. Hardcover. . . . . Books ship from the US and Ireland. N° de réf. du vendeur V9783319011646