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Description du livre Soft Cover. Etat : new. This item is printed on demand. N° de réf. du vendeur 9783642934087
Description du livre Etat : New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book. N° de réf. du vendeur ria9783642934087_lsuk
Description du livre Etat : New. N° de réf. du vendeur 18786317-n
Description du livre Etat : New. pp. 216. N° de réf. du vendeur 2658594878
Description du livre Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications. 216 pp. Englisch. N° de réf. du vendeur 9783642934087
Description du livre Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si. N° de réf. du vendeur 5075071
Description du livre Etat : New. N° de réf. du vendeur 18786317-n
Description du livre Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications. N° de réf. du vendeur 9783642934087
Description du livre Paperback. Etat : Brand New. 208 pages. 9.61x6.69x0.47 inches. In Stock. N° de réf. du vendeur x-3642934080
Description du livre Etat : New. Editor(s): Harris, Gary L.; Yang, Cary Y. W. Series: Springer Proceedings in Physics. Num Pages: 208 pages, biography. BIC Classification: PHFC. Category: (P) Professional & Vocational. Dimension: 244 x 170 x 11. Weight in Grams: 381. . 2012. Softcover reprint of the original 1st ed. 1989. Paperback. . . . . N° de réf. du vendeur V9783642934087