PAP. Etat : New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. N� de r�f. du vendeur IQ-9783659378638

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Studies on Vanadium based Schottky Contacts to n-type Indium Phosphide

S. Sankar Naik

Edit� par LAP LAMBERT Academic Publishing Mai 2013, 2013

ISBN 10 : 3659378631 ISBN 13 : 9783659378638

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Indium phosphide (InP) with a direct band gap of 1.35 eV is a promising material for photovoltaic solar energy conversion. The high radiation resistance and potentially high efficiency make InP solar cells excellent candidates for eventually using in space. InP and its related compounds have found potential applications in the design of high speed devices such as field effect transistors and high electron mobility transistor (FET, HEMT), charge coupled devices, solar and integrated optoelectronic devices such as radiation detectors and chemical sensors. InP schottky diodes are of special interest because of its special properties such as large mobility required for high speed devices, optimum bandgap for photovoltaic conversion and radiation resistance for solar cells. 164 pp. Englisch. N� de r�f. du vendeur 9783659378638

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Studies on Vanadium based Schottky Contacts to ntype Indium Phosphide

Sankar Naik S.

Edit� par LAP LAMBERT Academic Publishing, 2013

ISBN 10 : 3659378631 ISBN 13 : 9783659378638

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PAP. Etat : New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. N� de r�f. du vendeur L0-9783659378638

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Studies on Vanadium based Schottky Contacts to n-type Indium Phosphide

Sankar Naik S.

Edit� par LAP Lambert Academic Publishing, 2013

ISBN 10 : 3659378631 ISBN 13 : 9783659378638

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Studies on Vanadium based Schottky Contacts to n-type Indium Phosphide

Sankar Naik S.

Edit� par LAP Lambert Academic Publishing 2013-05, 2013

ISBN 10 : 3659378631 ISBN 13 : 9783659378638

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PF. Etat : New. N� de r�f. du vendeur 6666-IUK-9783659378638

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Studies on Vanadium based Schottky Contacts to n-type Indium Phosphide

S. Sankar Naik

Edit� par LAP LAMBERT Academic Publishing, 2013

ISBN 10 : 3659378631 ISBN 13 : 9783659378638

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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne

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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Indium phosphide (InP) with a direct band gap of 1.35 eV is a promising material for photovoltaic solar energy conversion. The high radiation resistance and potentially high efficiency make InP solar cells excellent candidates for eventually using in space. InP and its related compounds have found potential applications in the design of high speed devices such as field effect transistors and high electron mobility transistor (FET, HEMT), charge coupled devices, solar and integrated optoelectronic devices such as radiation detectors and chemical sensors. InP schottky diodes are of special interest because of its special properties such as large mobility required for high speed devices, optimum bandgap for photovoltaic conversion and radiation resistance for solar cells. N� de r�f. du vendeur 9783659378638

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Studies on Vanadium based Schottky Contacts to n-type Indium Phosphide

S. Sankar Naik|V. Rajagopal Reddy

Edit� par LAP LAMBERT Academic Publishing, 2013

ISBN 10 : 3659378631 ISBN 13 : 9783659378638

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Vendeur : moluna, Greven, Allemagne

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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Sankar Naik S.S. Shankar Naik did doctorate from Sri Venkateswara University, Tirupati in 2013. He has authored of 12 research articles in reputed International Journals. His research interests are Ohmic and Schottky contacts to wide. N� de r�f. du vendeur 5152286

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