Ultra-Low Voltage Nano-Scale Memories - Couverture rigide

Couverture rigide

ISBN 10 : 0387333983 ISBN 13 : 9780387333984

Editeur : Springer-Verlag New York Inc., 2007

Synopsis

Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed both to meet the needs of a rapidly growing mobile cell phone market and to offset a significant increase in the power dissipation of high-end microprocessor units. The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs.

A propos du livre

Présentation de l'éditeur :

The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. The authors share their knowledge and cover everything from the basics to the leading edge.

À propos de cette édition

• Éditeur: Springer-Verlag New York Inc.
• Date d'édition: 2007
• ISBN 10: 0387333983
• ISBN 13: 9780387333984
• Reliure: Relié
• Nombre de pages: 346