bernard sapoval claudine hermann (4 résultats)

Gebundene Ausgabe; Etat : Gut. IX, 319 S. Das hier angebotene Buch stammt aus einer teilaufgelösten wissenschaftlichen Bibliothek und trägt die entsprechenden Kennzeichnungen (Rückenschild, Instituts-Stempel.). Schnitt und Einband sind etwas staubschmutzig; Der Buchzustand ist ansonsten ordentlich und dem Alter entsprechend gut; ENGLISCH!! The book offered here comes from a partially resolved scientific library and transmits the appropriate markings (spine label, institute stamp .). The book condition is otherwise properly and according to age well; ENGLISH! Physique des semi-conducteurs Contens Preface v 1 Simple Ideas about Semiconductors 1 1.1 Definition and Importance of Semiconductors 1 1.2 A Chemical Approach to Semiconductors 3 1.3 Quantum States of a Perfect One-Dimensional Crystalline Solid 7 2 Quantum States of a Perfect Semiconductor 16 2.1 Quantum States of a Three-Dimensional Crystal 16 2.2 Dynamics of a Bloch Electron. The Crystal Momentum 23 2.3 Metal, Insulator, Semiconductor 27 2.4 Theoretical Determination of Band Structure 30 2.5 The True Band Structure 41 2.6 Experimental Study of Band Structure 43 Appendix 2.1 Matrix Element of a Periodic Operator between Two Bloch States 49 Appendix 2.2 Symmetries of the Band Structure 52 Appendix 2.3 Band Structure of Column IV Elements Calculated by the LCAO Method 54 Appendix 2.4 The ? p Method 61 3 Excited States of a Pure Semiconductor and Quantum States of Impure Semiconductors 65 3.1 The Hole Concept 65 3.2 Impurities in Semiconductors 71 3.3 Impurity Bands 76 Appendix 3.1 Problems on Cyclotron Resonance in Silicon 78 Appendix 3.2 Quantum Wells and Semiconducting Superlattices 84 Appendix 3.3 Amorphous Semiconductors 88 4 Statistics of Homogeneous Semiconductors 91 4.1 Occupation of the Electron Levels 91 VIU Contents 4.2 Hole Occupation 92 4.3 Determination of the Chemical Potential 92 4.4 Statistics of Pure or Intrinsic Semiconductors 94 4.5 Statistics of a Semiconductor Containing Impurities: The Notion of Majority and Minority Carriers 98 4.6 Compensated Semiconductor at Intermediate Temperature 102 4.7 Semiconductor at Low Temperatures 105 4.8 Application: The Semiconducting Thermometer 107 4.9 Growth of Pure Crystals 108 Appendix 4.1 Occupation Number of a Donor Level 112 Appendix 4.2 Problem: Substrates for Microelectronics 115 5 Transport Phenomena in Semiconductors 121 5.1 Introduction 121 5.2 Drude's Model of Conductivity and Diffusion 122 5.3 Semiclassical Treatment of Transport Processes 128 5.4 The Mobility of Semiconductors 136 Appendix 5.1 Problems on the Hall Effect and Magnetoresistance of Semiconductors in the Drude Model 140 6 Effects of Light 147 6.1 Light Absorption by Semiconductors 147 6.2 Recombination 156 6.3 Photoconductivity and its Applications 162 Appendix 6.1 Quantum System Submitted to a Sinusoidally Varying Perturbation 167 Appendix 6.2 Calculation of the Radiative Recombination Probability 171 Appendix 6.3 Semiconducting Clusters for Non-Linear Optics 175 7 Carrier Injection by Light 179 7.1 Basic Equations for Semiconductor Devices 179 7.2 Charge Neutrality 180 7.3 Injection or Extraction of Minority Carriers 181 Appendix 7.1 Charge Quasi-Neutrality 184 Appendix 7.2 Problems on Photoexcitation, Recombination, and Photoconductivity 187 8 The p-n Junction 194 8.1 Introduction: Inhomogeneous Semiconductors 194 8.2 The Equilibrium p^n Junction 196 8.3 The Non-Equilibrium Junction 204 Appendix 8.1 Problem: Non-Stationary p-n Junctions and their High-Prequency Applications 218 ix Contents 9 Applications of the p-^n Junction and Asymmetrical Devices 230 9.1 Applications of p-n Junctions 230 9.2 The Metal-Semiconductor Contact in Equilibrium 234 9.3 Non-Equilibrium Metal-Semiconductor Junction 238 9.4 The Semiconductor Surface 241 9.5 Photoemission from Semiconductors 243 9.6 Heterojunctions 245 10 The Principles of Some Electronic Devices 247 10.1 The Junction Transistor 247 10.2 The Field-Effect Transistor 252 10.3 An Application of the MOSFET: The Charge-Coupled Device (CCD) 257 10.4 Concepts of Integration and Planar Technology 258 10.5 Band Gap Engineering 262 10.6 Physical Limits in Digital Electronics 264 Appendix 10.1 Problems on the n-p-n Transistor 268 Appendix 10.2 Problems on the Junction Field- Effect Transistor 277 Appendix 10.3 Problems on MOS (Metal-Oxide- Semiconductor) Structure 286 Values of the Important Physical Constants 301 Some Physical Properties of Semiconductors 303 Bibliography 305 307 Index Sprache: Englisch Gewicht in Gramm: 600.

Etat : BUONO USATO. Francese Grande brossura editoriale, copertina segnata da minime tracce da manipolazione e compressione ai piatti e dorso, pigmento ingiallito ombrato da polvere e macchie di umido, grafici nel testo, carte bianche ben conservate leggermente ondulate, minimo pulviscolo ai tagli. N. pag. 307.

Etat : New. Based on courses given at the Ecole Polytechnique in France, this book covers the fundamental physics of semiconductors, and also discusses the operation of electronic and optical devices based on semiconductors. Translator(s): King, A.R. Num Pages: 320 pages, biography. BIC Classification: PHFC; PHK. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 238 x 165 x 25. Weight in Grams: 630. . 1994. Hardback. . . . .

Etat : New. Based on courses given at the Ecole Polytechnique in France, this book covers the fundamental physics of semiconductors, and also discusses the operation of electronic and optical devices based on semiconductors. Translator(s): King, A.R. Num Pages: 320 pages, biography. BIC Classification: PHFC; PHK. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 238 x 165 x 25. Weight in Grams: 630. . 1994. Hardback. . . . . Books ship from the US and Ireland.