advanced spice model gan de khandelwal sourabh (19 résultats)

Etat : Muy bueno. : Este libro presenta un modelo SPICE avanzado para HEMT de GaN, un nuevo estándar industrial para el diseño de circuitos de potencia y RF. Publicado por Springer International Publishing AG en 2022, cuenta con 188 páginas y está escrito en inglés. El autor principal es Sourabh Khandelwal. EAN: 9783030777326 Tipo: Libros Categoría: Tecnología Título: Advanced SPICE Model for GaN HEMTs Autor: Sourabh Khandelwal Idioma: en Páginas: 188.

Etat : New. 1st ed. 2022 edition NO-PA16APR2015-KAP.

Taschenbuch. Etat : Neu. Advanced SPICE Model for GaN HEMTs (ASM-HEMT) | A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design | Sourabh Khandelwal | Taschenbuch | xv | Englisch | 2022 | Springer Nature Switzerland | EAN 9783030777326 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.Describes in detail a new industry standard for GaN-based power and RF circuit design;Includes discussion of practical problems and theirsolutions in GaN device modeling;Covers both radio-frequency (RF) and power electronics application of GaN technology;Describes modeling of both GaN RF and power devices.

Etat : Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher | This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.Describes in detail a new industry standard for GaN-based power and RF circuit design;Includes discussion of practical problems and theirsolutions in GaN device modeling;Covers both radio-frequency (RF) and power electronics application of GaN technology;Describes modeling of both GaN RF and power devices.

Etat : Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.Describes in detail a new industry standard for GaN-based power and RF circuit design;Includes discussion of practical problems and theirsolutions in GaN device modeling;Covers both radio-frequency (RF) and power electronics application of GaN technology;Describes modeling of both GaN RF and power devices.

Etat : New. 1st ed. 2022 edition NO-PA16APR2015-KAP.

Etat : Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.Describes in detail a new industry standard for GaN-based power and RF circuit design;Includes discussion of practical problems and theirsolutions in GaN device modeling;Covers both radio-frequency (RF) and power electronics application of GaN technology;Describes modeling of both GaN RF and power devices.

Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.Describes in detail a new industry standard for GaN-based power and RF circuit design;Includes discussion of practical problems and theirsolutions in GaN device modeling;Covers both radio-frequency (RF) and power electronics application of GaN technology;Describes modeling of both GaN RF and power devices. 204 pp. Englisch.

Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the AS.

Etat : New. Print on Demand This item is printed on demand.

Etat : New. PRINT ON DEMAND.

Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.Describes in detail a new industry standard for GaN-based power and RF circuit design;Includes discussion of practical problems and theirsolutions in GaN device modeling;Covers both radio-frequency (RF) and power electronics application of GaN technology;Describes modeling of both GaN RF and power devices.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 204 pp. Englisch.

Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.Describes in detail a new industry standard for GaN-based power and RF circuit design;Includes discussion of practical problems and theirsolutions in GaN device modeling;Covers both radio-frequency (RF) and power electronics application of GaN technology;Describes modeling of both GaN RF and power devices. 204 pp. Englisch.

Buch. Etat : Neu. Advanced SPICE Model for GaN HEMTs (ASM-HEMT) | A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design | Sourabh Khandelwal | Buch | xv | Englisch | 2021 | Springer Nature Switzerland | EAN 9783030777296 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.

Etat : New. Print on Demand.

Buch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.Describes in detail a new industry standard for GaN-based power and RF circuit design;Includes discussion of practical problems and theirsolutions in GaN device modeling;Covers both radio-frequency (RF) and power electronics application of GaN technology;Describes modeling of both GaN RF and power devices.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 204 pp. Englisch.

Etat : New. PRINT ON DEMAND.