Advanced Theory of Semiconductor Devices - Couverture rigide

Hess, Karl

Couverture rigide

ISBN 10 : 0130115118 ISBN 13 : 9780130115119

Editeur : Prentice-Hall, 1987

Synopsis

Book by Hess Karl

A propos du livre

Quatrième de couverture

Electrical Engineering Advanced Theory of Semiconductor Devices Semiconductor devices are ubiquitous in today’s world and are found increasingly in cars, kitchens and electronic door locks, attesting to their presence in our daily lives. This comprehensive book provides the fundamentals of semiconductor device theory from basic quantum physics to computer–aided design. Advanced Theory of Semiconductor Devices will improve your understanding of computer simulation of devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state–of–the–art knowledge of devices used in both III V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p n junction diodes. Close attention is also given to innovative treatments of quantum–well laser diodes and hot electron effects in silicon technology. This in–depth book is written for engineers, graduate students, and research scientists in solid–state electronics who want to gain a better understanding of the principles underlying semiconductor devices.

Présentation de l'éditeur

Semiconductor devices are ubiquitous in today′s world and found increasingly in cars, kitchens, and electronic door looks, attesting to their presence in our daily lives. This comprehensive book brings you the fundamentals of semiconductor device theory from basic quantum physics to computer aided design.

Advanced Theory of Semiconductor Devices will help improve your understanding of computer simulation devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state–of–the–art knowledge of devices used in both III–V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p–n junction diodes. Close attention is also given to innovative treatments of quantum level laser diodes and hot electron effects in silicon technology.

This in–depth book is designed expressly for graduate students, research scientists, and research engineers in solid state electronics who want to gain a better grasp of the principles underlying semiconductor devices.

Détails de l'édition

• Éditeur: Prentice-Hall
• Date d'édition: 1987
• Langue: anglais
• ISBN 10: 0130115118
• ISBN 13: 9780130115119
• Reliure: Relié
• Nombre de pages: 288
• Coordonnées du fabricant: non disponible
• Personne responsable: non disponible