Integrated Microelectronic Devices: Physics and Modeling - Couverture rigide

Del Alamo, J.

Couverture rigide

ISBN 10 : 0134670906 ISBN 13 : 9780134670904

Editeur : Pearson, 2017

Synopsis

A modern take on microelectronic device engineering

Microelectronics is a 50-year-old engineering discipline still undergoing rapid evolution and societal adoption. Integrated Microelectronic Devices: Physics and Modeling fills the need for a rigorous description of semiconductor device physics that is relevant to modern nanoelectronics. The central goal is to present the fundamentals of semiconductor device operation with relevance to modern integrated microelectronics. Emphasis is devoted to frequency response, layout, geometrical effects, parasitic issues and modeling in integrated microelectronics devices (transistors and diodes). In addition to this focus, the concepts learned here are highly applicable in other device contexts.

This text is suitable for a one-semester junior or senior-level course by selecting the front sections of selected chapters (e.g. 1-9). It can also be used in a two-semester senior-level or a graduate-level course by taking advantage of the more advanced sections.

A propos du livre

À propos de l?auteur

Jesús A. del Alamois Donner Professor and Professor of Electrical Engineering in the Department of Electrical Engineering and Computer Science at Massachusetts Institute of Technology. He is also Director of the Microsystems Technology Laboratories at MIT. He obtained a Telecommunications Engineer degree from the Universidad Politécnica de Madrid (Spain) and MS and PhD degrees in Electrical Engineering from Stanford University. Over the years, Prof. del Alamo has been involved in research on transistors and other electronic devices in a variety of material systems. He has worked on Si solar cells, Si bipolar junction transistors, Si metal--oxide--semiconductor field-effect transistors (MOSFETs), SiGe heterostructure devices, GaAs pseudomorphic high electron mobility transistors (PHEMTs), InGaAs high electron mobility transistors (HEMTs) and MOSFETs, InGaSb HEMTs and MOSFETs, GaN HEMTs and MOSFETs, and more recently diamond MOSFETs. Prof. del Alamo teaches undergraduate and graduate-level courses at MIT in electronics, electron devices and circuits, and advanced semiconductor device physics. He has received multiple teaching and achievement awards at MIT: the 1992 Baker Memorial Award for Excellence in Undergraduate Teaching, the 1993 H. E. Edgerton Junior Faculty Achievement Award, the 2001 Louis D. Smullin Award for Excellence in Teaching, and the 2002 Amar Bose Award for Excellence in Teaching. In 2012, Prof. del Alamo was awarded the IEEE Electron Devices Society Education Award "for pioneering contributions to the development of online laboratories for microelectronics education on a worldwide scale".

Détails de l'édition

• Éditeur: Pearson
• Date d'édition: 2017
• Langue: anglais
• ISBN 10: 0134670906
• ISBN 13: 9780134670904
• Reliure: Relié
• Numéro d'édition: 1
• Nombre de pages: 880
• Coordonnées du fabricant: non disponible
• Personne responsable: Riccardo Bacigalupo; riccardo.bacigalupo@sanoma.it; ; Sanoma Italia Via Arconati, 1 �; Milano; 20135; Italie