FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters.
With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
Yogesh Singh Chauhan is a Chair Professor in the Department of Electrical Engineering at the Indian Institute of Technology Kanpur, India. He is the developer of several industry standard models: ASM-HEMT, BSIM-BULK (formerly BSIM6), BSIM-CMG, BSIM-IMG, BSIM4 and BSIM-SOI models. His research group is involved in developing compact models for GaN transistors, FinFET, nanosheet/gate-all-around FETs, FDSOI transistors, negative capacitance FETs and 2D FETs. His research interests are RF characterization, modeling, and simulation of semiconductor devices.
Chenming Hu is TSMC Distinguished Chair Professor Emeritus at the University of California Berkeley, United States. He was the Chief Technology Officer of TSMC. He received the US Presidential Medal of Technology and Innovation from Pres. Barack Obama for developing the first 3D thin-body transistor FinFET, MOSFET reliability models and leading the development of BSIM industry standard transistor model that is used in designing most of the integrated circuits in the world. He is a member of the US Academy of Engineering, the Chinese Academy of Science, and Academia Sinica. He received the highest honor of IEEE, the IEEE Medal of Honor, and its Andrew Grove Award, Solid Circuits Award, and the Nishizawa Medal. He also received the Taiwan Presidential Science Prize and UC Berkeley's highest honor for teaching - the Berkeley Distinguished Teaching Award.
Sayeef Salahuddin is the TSMC Distinguished Chair Professor at the University of California, Berkeley He received the Presidential Early Career Award for Scientists and Engineers by President Obama among several other early career awards from multiple federal agencies. He also received the IEEE Andrew S Grove Award for his pioneering work in ferroelectric negative capacitance and its incorporation into the most advanced DRAM memory and back-end capacitors. He is a Fellow of the IEEE, APS and AAAS and is the editor-in-chief of the IEEE Electron Devices Letters.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
EUR 17,07 expédition depuis Etats-Unis vers France
Destinations, frais et délaisEUR 9,70 expédition depuis Allemagne vers France
Destinations, frais et délaisVendeur : moluna, Greven, Allemagne
Etat : New. Über den AutorYogesh Singh Chauhan is a Professor at the Indian Institute of Technology Kanpur. His research interests include the physics, characterization, and modeling of nanoscale semiconductor devices, and RF circuit design. N° de réf. du vendeur 897746739
Quantité disponible : 2 disponible(s)
Vendeur : PBShop.store UK, Fairford, GLOS, Royaume-Uni
PAP. Etat : New. New Book. Shipped from UK. Established seller since 2000. N° de réf. du vendeur DB-9780323957298
Quantité disponible : 2 disponible(s)
Vendeur : GreatBookPrices, Columbia, MD, Etats-Unis
Etat : New. N° de réf. du vendeur 46130619-n
Quantité disponible : 1 disponible(s)
Vendeur : Majestic Books, Hounslow, Royaume-Uni
Etat : New. N° de réf. du vendeur 401497147
Quantité disponible : 3 disponible(s)
Vendeur : Revaluation Books, Exeter, Royaume-Uni
Paperback. Etat : Brand New. 2nd edition. 350 pages. 9.25x7.50x9.30 inches. In Stock. This item is printed on demand. N° de réf. du vendeur __0323957293
Quantité disponible : 2 disponible(s)
Vendeur : GreatBookPricesUK, Woodford Green, Royaume-Uni
Etat : New. N° de réf. du vendeur 46130619-n
Quantité disponible : 1 disponible(s)
Vendeur : Wegmann1855, Zwiesel, Allemagne
Taschenbuch. Etat : Neu. Neuware -FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters. N° de réf. du vendeur 9780323957298
Quantité disponible : 1 disponible(s)
Vendeur : THE SAINT BOOKSTORE, Southport, Royaume-Uni
Paperback / softback. Etat : New. New copy - Usually dispatched within 4 working days. 222. N° de réf. du vendeur B9780323957298
Quantité disponible : Plus de 20 disponibles
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. Neuware -FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters. 307 pp. Englisch. N° de réf. du vendeur 9780323957298
Quantité disponible : 1 disponible(s)
Vendeur : Rheinberg-Buch Andreas Meier eK, Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. Neuware -FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters. 307 pp. Englisch. N° de réf. du vendeur 9780323957298
Quantité disponible : 1 disponible(s)