Articles liés à Matching Properties Of Deep Sub-micron Mos Transistors
Synopsis
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction:
A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter.
The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters.
The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance.
The impact of process parameters on the matching properties is discussed.
The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor.
Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
- ÉditeurSpringer-Verlag New York Inc.
- Date d'édition2005
- ISBN 10 0387243143
- ISBN 13 9780387243146
- ReliureRelié
- Langueanglais
- Nombre de pages206
- Coordonnées du fabricantnon disponible
Acheter neuf
Afficher cet article
EUR 170,64
EUR 4,75 expédition depuis Royaume-Uni vers France
Destinations, frais et délaisAutres éditions populaires du même titre
Résultats de recherche pour Matching Properties Of Deep Sub-micron Mos Transistors
Image d'archives
Matching Properties of Deep Sub-Micron Mos Transistors
Edité par
Springer, 2005
ISBN 10 : 0387243143
ISBN 13 : 9780387243146
Ancien ou d'occasion
Couverture rigide
Vendeur : ThriftBooks-Atlanta, AUSTELL, GA, Etats-Unis
Évaluation du vendeur 5 sur 5 étoiles
Hardcover. Etat : Very Good. No Jacket. May have limited writing in cover pages. Pages are unmarked. ~ ThriftBooks: Read More, Spend Less 1.05. N° de réf. du vendeur G0387243143I4N00
Quantité disponible : 1 disponible(s)
Image d'archives
Matching Properties of Deep Sub-Micron MOS Transistors (The Springer International Series in Engineering and Computer Science, 851)
Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. In. N° de réf. du vendeur ria9780387243146_new
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
Matching Properties of Deep Sub-Micron MOS Transistors
Vendeur : moluna, Greven, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Gebunden. Etat : New. Aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFETIncludes supplementary material: sn.pub/extrasMatching Propert. N° de réf. du vendeur 5909369
Quantité disponible : Plus de 20 disponibles
Image d'archives
Matching Properties of Deep Sub-Micron MOS Transistors (The Springer International Series in Engineering and Computer Science, 851)
Vendeur : Lucky's Textbooks, Dallas, TX, Etats-Unis
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. N° de réf. du vendeur ABLIING23Feb2215580171147
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
Matching Properties of Deep Sub-Micron Mos Transistors
Edité par
Springer Us Mär 2005, 2005
ISBN 10 : 0387243143
ISBN 13 : 9780387243146
Neuf
Couverture rigide
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Buch. Etat : Neu. Neuware - Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction:A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter.The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET. N° de réf. du vendeur 9780387243146
Quantité disponible : 2 disponible(s)