Engineering of Point Defects in Solids - Couverture souple

Bulyarskiy

Couverture souple

ISBN 10 : 044344305X ISBN 13 : 9780443443053

Editeur : Elsevier, 2026

Synopsis

Engineering of Point Defects in Solids: A Thermodynamic Approach to the Physics of Semiconductors covers the theoretical and experimental thermodynamics and kinetics of defect formations in solids, including the formation of complex defects from simple ones. The book describes point defects (vacancies, antistructural, interstitial atoms, and impurities) while also providing algorithms for calculating their defect concentrations, conductivity, and stoichiometric composition. Doping of a substance with impurities, with a focus on germanium and silicon (as common semiconductors), is covered, including retrograde solubility, polytrophy, the solubility of impurities, and the mutual influence of donor and acceptor impurities. The thermodynamics of complex defects formed with the participation of vacancies (divacancies and complexes) are discussed, as is luminescence as a non-destructive method for monitoring the dynamics of changes in the concentration of defects in certain technological processes, with particular attention paid to the phenomenon of electron-photon interaction. Other topics covered include the optical properties of various complexes, compounds with volatile components, analyzing the kinetics of precipitate and nanocrystal formation, and more.

A propos du livre

À propos de l'auteur

Russian Academy of Sciences, Russia

Détails de l'édition

• Éditeur: Elsevier
• Date d'édition: 2026
• Langue: anglais
• ISBN 10: 044344305X
• ISBN 13: 9780443443053
• Reliure: Broché
• Nombre de pages: 434
• Coordonnées du fabricant: non disponible
• Personne responsable: Barbara Criscuolo; b.criscuolo@lswr.it; ; Via Spadolini, 7; Milano; 20141; Italie