Articles liés à Charge-based Mos Transistor Modeling: The Ekv Model...
Charge-based Mos Transistor Modeling: The Ekv Model for Low-power And Rf Ic Design - Couverture rigide
Synopsis
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters.
Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine:
- the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties;
- the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices;
- the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits.
Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
À propos de l?auteur
Christian C. Enz and Eric A. Vittoz are the authors of Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design, published by Wiley.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
- ÉditeurJohn Wiley & Sons Inc
- Date d'édition2006
- ISBN 10 047085541X
- ISBN 13 9780470855416
- ReliureRelié
- Langueanglais
- Nombre de pages328
- Coordonnées du fabricantnon disponible
Acheter neuf
Afficher cet article
EUR 119,01
EUR 9,70 expédition depuis Allemagne vers France
Destinations, frais et délaisRésultats de recherche pour Charge-based Mos Transistor Modeling: The Ekv Model...
Image fournie par le vendeur
MOS Transistor Modeling for Integrated Circuit Design
Edité par
John Wiley & Sons, 2006
ISBN 10 : 047085541X
ISBN 13 : 9780470855416
Neuf
Couverture rigide
Vendeur : moluna, Greven, Allemagne
Évaluation du vendeur 4 sur 5 étoiles
Etat : New. Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power con. N° de réf. du vendeur 446913820
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
Charge-based Mos Transistor Modeling : The Ekv Model for Low-power And Rf Ic Design
Vendeur : GreatBookPrices, Columbia, MD, Etats-Unis
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. N° de réf. du vendeur 1538494-n
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
Charge-based Mos Transistor Modeling : The Ekv Model for Low-power And Rf Ic Design
Edité par
Wiley, 2006
ISBN 10 : 047085541X
ISBN 13 : 9780470855416
Ancien ou d'occasion
Couverture rigide
Vendeur : GreatBookPrices, Columbia, MD, Etats-Unis
Évaluation du vendeur 5 sur 5 étoiles
Etat : As New. Unread book in perfect condition. N° de réf. du vendeur 1538494
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
Charge-based Mos Transistor Modeling : The Ekv Model for Low-power And Rf Ic Design
Edité par
Wiley, 2006
ISBN 10 : 047085541X
ISBN 13 : 9780470855416
Ancien ou d'occasion
Couverture rigide
Vendeur : GreatBookPricesUK, Woodford Green, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Etat : As New. Unread book in perfect condition. N° de réf. du vendeur 1538494
Quantité disponible : Plus de 20 disponibles
Image d'archives
Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design
Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. In. N° de réf. du vendeur ria9780470855416_new
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
Charge-based Mos Transistor Modeling : The Ekv Model for Low-power And Rf Ic Design
Vendeur : GreatBookPricesUK, Woodford Green, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. N° de réf. du vendeur 1538494-n
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
Charge-Based Mos Transistor Modeling : The Ekv Model for Low-Power and RF IC Design
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Buch. Etat : Neu. Neuware - Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters.Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine:\* the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties;\* the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices;\* the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits.Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering. N° de réf. du vendeur 9780470855416
Quantité disponible : 2 disponible(s)
Image d'archives
Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design
Edité par
John Wiley & Sons Inc, 2006
ISBN 10 : 047085541X
ISBN 13 : 9780470855416
Neuf
Couverture rigide
Vendeur : THE SAINT BOOKSTORE, Southport, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Hardback. Etat : New. New copy - Usually dispatched within 4 working days. 794. N° de réf. du vendeur B9780470855416
Quantité disponible : Plus de 20 disponibles
Image d'archives
Charge-Based Mos Transistor Modeling
Vendeur : PBShop.store UK, Fairford, GLOS, Royaume-Uni
Évaluation du vendeur 4 sur 5 étoiles
HRD. Etat : New. New Book. Shipped from UK. Established seller since 2000. N° de réf. du vendeur FW-9780470855416
Quantité disponible : 15 disponible(s)
Image d'archives
Charge-Based MOS Transistor Modeling (Hardcover)
Edité par
John Wiley & Sons Inc, New York, 2006
ISBN 10 : 047085541X
ISBN 13 : 9780470855416
Neuf
Couverture rigide
Edition originale
Vendeur : CitiRetail, Stevenage, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Hardcover. Etat : new. Hardcover. Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties;the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices;the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering. As technology scales down to sub-micron dimensions the modelling of MOS device operation becomes of greater concern. The EKV model has been developed to facilitate the modelling and simulation of low voltage devices for application in low power semiconductor technologies. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. N° de réf. du vendeur 9780470855416
Quantité disponible : 1 disponible(s)