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The Insulated Gate Bipolar Transistor Igbt: Theory and Design - Couverture rigide

Khanna, Vinod Kumar

 
9780471238454: The Insulated Gate Bipolar Transistor Igbt: Theory and Design

Synopsis

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.

  • All-in-one resource
  • Explains the fundamentals of MOS and bipolar physics.
  • Covers IGBT operation, device and process design, power modules, and new IGBT structures.

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À propos de l'auteur

VINOD KUMAR KHANNA, PhD, is a senior scientist working in the solid-state devices division of Central Electronics Engineering Research Institute in Pilani, India. He has been extensively involved for more than twenty years in device, process design and fabrication of power semiconductor devices. He received his PhD in Physics from Kurukshetra University in 1988. A Fellow of the Institution of Electronics and Telecommunication Engineers and a lifetime member of several scientific and professional organizations, Dr. Khanna has published over thirty research papers in international journals and conference proceedings and written two previous books entitled, Handbook of Electrical & Electronics Engineering Fundamentals, and Digital Signal Processing, Telecommunications & Multimedia Technology.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.