Articles liés à Mos Metal Oxide Semiconductor Physics and Technology

Mos Metal Oxide Semiconductor Physics and Technology - Couverture souple

Nicollian, E. H.; Brews, J. R.

 
9780471430797: Mos Metal Oxide Semiconductor Physics and Technology

Synopsis

Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.

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À propos de l'auteur

E. H. Nicollian (deceased) was a?researcher at AT&T Bell Laboratories, Murray Hill, NJ.

John R. Brews, currently Professor of Electrical Engineering, University of Arizona, Tucson AZ, was a researcher at AT&T Bell Laboratories, Murray Hill, NJ.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.