Nonvolatile Memory Technologies with Emphasis on Flash Nonvolatile Memory Technologies with Emphasis on Flash (NMT) provides a detailed view of the integrated circuit main line technologies; the book gives an introduction to technologies that have less manufacturing exposure, and presents a description of various possible alternative technologies that may emerge in the future. Full description
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The authoritative reference guide for nonvolatile memory users
Presented here is an all–inclusive treatment of Flash technology, includingFlash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. Comprised of thirteen succinct chapters authored by pioneers in the field, this book begins with a brief tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it builds upon this foundation to cover all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.
Nonvolatile Memory Technologies with Emphasis on Flash seamlessly gathers together information on the complex group of technologies that make up nonvolatile memory into one well–organized book. While providing a detailed view of state–of–the–art mainline technologies that are currently being produced in high volume, it also explores less–exposed and alternate technologies that may emerge in the future. Written as a general reference, Nonvolatile Memory Technologies with Emphasis on Flash serves as both an ideal supplemental text for undergraduate and graduate courses on nonvolatile memory and as an invaluable resource for engineers, technical managers, and other sophisticated practitioners.
Joe E. Brewer, MS, spent most of his career with Westinghouse Electric (now Northrop Grumman Corporation), where he retired in 1998. In 2000, he joined the faculty of the Electrical and Computer Engineering Department of the University of Florida. He was an early contributor to the IEEE Standards for MNOS Arrays and Floating Gate Arrays. He is a Fellow of the IEEE, has authored more than 100 papers, and holds seven U.S. patents.
Manzur Gill, PhD, is Chief Advancement Officer and Professor of Physics at Forman Christian College, Lahore, in Pakistan. Dr. Gill has more than twenty–five years of experience in high–tech industry and nonvolatile memory development, has authored over thirty technical publications in international journals, and holds over seventy–five patents.
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