The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
T. P. Ma and Paul V. Dressendorfer are the authors of Ionizing Radiation Effects in MOS Devices and Circuits, published by Wiley.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
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Etat : New. The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process--induced radiation effects in the fabrication of high--density circuits. Editor(s): Ma, T. P.; Dressendorfer, Paul V. Num Pages: 608 pages, Ill. BIC Classification: TJFC. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 244 x 168 x 37. Weight in Grams: 1006. . 1989. 1st Edition. hardcover. . . . . N° de réf. du vendeur V9780471848936
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Hardcover. Etat : new. Hardcover. The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research. The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process--induced radiation effects in the fabrication of high--density circuits. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. N° de réf. du vendeur 9780471848936
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Etat : New. The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process--induced radiation effects in the fabrication of high--density circuits. Editor(s): Ma, T. P.; Dressendorfer, Paul V. Num Pages: 608 pages, Ill. BIC Classification: TJFC. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 244 x 168 x 37. Weight in Grams: 1006. . 1989. 1st Edition. hardcover. . . . . Books ship from the US and Ireland. N° de réf. du vendeur V9780471848936
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