ESD in Silicon Integrated Circuits: An Introduction to Device Physics and Protection - Couverture rigide

Amerasekera, E. Ajith; Duvvury, Charvaka

Couverture rigide

ISBN 10 : 0471954810 ISBN 13 : 9780471954811

Editeur : John Wiley & Sons Ltd, 1995

Synopsis

This detailed study explains the practical aspects of electrostatic discharge (ESD) and its implications in the design and development of new technologies and integrated circuits. It opens with an introductory overview of ESD and its importance to the semiconductor industry. All aspects of ESD are explored in detail, ranging from physics and circuit design to the effects of processing and packaging and the relatively new field of modelling for ESD studies. There is a concentration upon the key issue of reliability and test methods to assess protection circuit performance. Various case studies are employed to illustrate the effects of different design approaches and the full effectiveness of a protection circuit is realized through stress analysis. The book concludes with a summary of the state-of-the-art protection techniques and a look towards the future developments in ESD.

A propos du livre

Quatrième de couverture

As high density circuits move deeper into submicron dimensionsElectrostatic Discharge (ESD) effects become an increasing concern.This new edition of a classic reference presents a practical andsystematic approach to ESD device physics, modelling and designtechniques. The authors draw upon their wealth of industrialexperience to provide a complete overview of ESD and itsimplications in the development of advanced integratedcircuits.

Fully revised to incorporate the latest industry achievements andfeaturing:
∗ Design methods for a variety of technologies from 1 micron to thecurrent sub–micron regimes, along with complete design approachesfor MOS, BiCMOS and Power MOSFETs.

∗ New sections on ESD design rules, process technology effects,layout approaches, package effects and circuit simulations.

∗ Guidance on the implementation of circuit protection measures fora range of I/O configurations.

∗ Detailed coverage of ESD simulation stress models.
This unique reference provides the means to design protectioncircuits for a variety of applications and to diagnose and solveESD problems in IC products. The coverage of state–of–the–artcircuit design for ESD prevention will appeal to engineers andscientists working in the fields of IC and transistor design.Graduate students and researchers in device/circuit modeling andsemiconductor reliability will appreciate this comprehensivecoverage of ESD fundamentals.

Présentation de l'éditeur

Esd in Silicon Integrated Circuits Ajith Amerasekera CharvakaDuvvury Texas Instruments Inc, Dallas, USA Electrostatic Discharge(ESD) effects in silicon integrated circuits have become a majorconcern as today′s high circuit density technologies shrink tosub–micro dimensions. This book provides an understanding of thebasic features related to ESD and deals with topics ranging fromthe physics of devices operating under ESD conditions to approachesfor solving and improving ESD performance in advanced ICs. Featuresinclude:
∗ Description of the methods used to reproduce ESD–type events in acontrolled test environment
∗ Analysis of the behavior of different semiconductor devices underESD conditions, including the physics and modeling of devices
∗ Detailed study of design and layout requirements for ESDprotection circuits
∗ Case studies showing examples of approaches to solving ESD designproblems, including failure analysis
Covering the state–of–the–art in circuit design for ESD prevention,this practical book is written from an industrial perspective andwill appeal to engineers and scientists working in the fields of ICand transistor design. Researchers and advanced students in thefields of device/circuit modeling and semiconductor reliability,seeking to understand the fundamentals of ESD phenomena, will alsofind this book an invaluable reference source.

Détails de l'édition

• Éditeur: John Wiley & Sons Ltd
• Date d'édition: 1995
• Langue: anglais
• ISBN 10: 0471954810
• ISBN 13: 9780471954811
• Reliure: Relié
• Nombre de pages: 300
• Coordonnées du fabricant: non disponible
• Personne responsable: non disponible