Photo-induced Defects Semiconductrs - Couverture souple

Redfield, David

Couverture souple

ISBN 10 : 0521024455 ISBN 13 : 9780521024457

Editeur : Cambridge University Press, 2008

Synopsis

Book by Redfield David Bube Richard H

A propos du livre

Présentation de l'éditeur :

This is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the properties of DX and EL2 centres in III–V compounds are presented. Additional crystalline materials are also dealt with, before a detailed description is given of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. Throughout, unifying concepts and models are stressed, and the book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

Revue de presse :

'The authors give an excellent account of all the basic research undertaken in the area of defects in semiconductors particularly during the last 15 years. They assume that the reader has some basic knowledge of semiconductor physics. The text is presented in a very readable style and it contains over 100 figures. The book should be of direct interest to those scientists actively engaged in both fundamental and applied semiconductor physics. It is very readable and is of a high standard throughout.' C. A. Bates, Contemporary Physics

À propos de cette édition

• Éditeur: Cambridge University Press
• Date d'édition: 2008
• ISBN 10: 0521024455
• ISBN 13: 9780521024457
• Reliure: Broché
• Numéro d'édition: 1
• Nombre de pages: 232