Modeling and Characterization of Rf and Microwave Power Fets - Couverture souple

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9780521870665: Modeling and Characterization of RF and Microwave Power FETs

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ISBN 10 : 0521870666 ISBN 13 : 9780521870665
Editeur : Cambridge University Press, 2007
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)

Aaen, Peter; Pl�, Jaime A.; Wood, John

Edit� par Cambridge University Press, 2011

ISBN 10 : 0521336171 ISBN 13 : 9780521336178

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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)

Aaen, Peter; Pl�, Jaime A.; Wood, John

Edit� par Cambridge University Press, 2011

ISBN 10 : 0521336171 ISBN 13 : 9780521336178

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Modeling and Characterization of RF and Microwave Power FETs

Peter Aaen, Jaime A. Plá, John Wood

Edit� par Cambridge University Press, 2011

ISBN 10 : 0521336171 ISBN 13 : 9780521336178

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Paperback. Etat : Brand New. 1st edition. 378 pages. 9.50x6.70x0.90 inches. In Stock. This item is printed on demand. N� de r�f. du vendeur __0521336171

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Modeling and Characterization of RF and Microwave Power FETs (Paperback)

Peter Aaen

Edit� par Cambridge University Press, Cambridge, 2011

ISBN 10 : 0521336171 ISBN 13 : 9780521336178

Neuf Paperback

Vendeur : Grand Eagle Retail, Fairfield, OH, Etats-Unis

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Paperback. Etat : new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. N� de r�f. du vendeur 9780521336178

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Modeling and Characterization of RF and Microwave Power FETs

Peter Aaen

Edit� par Cambridge University Press, 2011

ISBN 10 : 0521336171 ISBN 13 : 9780521336178

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Paperback / softback. Etat : New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days 640. N� de r�f. du vendeur C9780521336178

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Modeling and Characterization of Rf and Microwave Power Fets (The Cambridge RF and Microwave Engineering Series)

Peter H. Aaen

Edit� par Cambridge University Press 2011-06-30, 2011

ISBN 10 : 0521336171 ISBN 13 : 9780521336178

Neuf Paperback

Vendeur : Chiron Media, Wallingford, Royaume-Uni

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Paperback. Etat : New. N� de r�f. du vendeur 6666-IUK-9780521336178

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Modeling and Characterization of RF and Microwave Power Fets

Aaen, Peter|Pl, Jaime A.|Wood, John

Edit� par Cambridge University Press, 2011

ISBN 10 : 0521336171 ISBN 13 : 9780521336178

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Kartoniert / Broschiert. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples.Inhaltsver. N� de r�f. du vendeur 446932254

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Modeling and Characterization of RF and Microwave Power Fets

Peter Aaen

Edit� par Cambridge University Press, 2011

ISBN 10 : 0521336171 ISBN 13 : 9780521336178

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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne

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Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This 2007 book was the first to be devoted to the compact modeling of RF power FETs. N� de r�f. du vendeur 9780521336178

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Modeling and Characterization of RF and Microwave Power FETs (Paperback)

Peter Aaen

Edit� par Cambridge University Press, Cambridge, 2011

ISBN 10 : 0521336171 ISBN 13 : 9780521336178

Neuf Paperback

Vendeur : CitiRetail, Stevenage, Royaume-Uni

�valuation du vendeur 5 sur 5 �toiles

Paperback. Etat : new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. N� de r�f. du vendeur 9780521336178

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Modeling and Characterization of RF and Microwave Power FETs (Paperback)

Peter Aaen

Edit� par Cambridge University Press, Cambridge, 2011

ISBN 10 : 0521336171 ISBN 13 : 9780521336178

Neuf Paperback

Vendeur : AussieBookSeller, Truganina, VIC, Australie

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Paperback. Etat : new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability. N� de r�f. du vendeur 9780521336178

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