This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
Peter H. Aaen is the Modeling Group Manager in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona. Jaime A. Pia is the Design Organization Manager in the RF Division at Freescale in the RF Division at Freescale Semiconductor, Inc., Tempe Arizona. John Wood is Senior Technical Contributor responsible for RF CAD and Modeling in the RF Division at Freescale Semiconductor, Inc., Tempe, Arizona. He is a Fellow of the IEEE.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
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Hardcover. Etat : new. Hardcover. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. N° de réf. du vendeur 9780521870665
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