The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.
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C.K Maiti, G.A Armstrong
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Vendeur : SKULIMA Wiss. Versandbuchhandlung, Westhofen, Allemagne
Etat : Sehr Gut. Zustandsbeschreibung: bumped. Deals with the design and optimization of transistors made from strained layers. This book covers key technology issues for the growth of strained layers, background theory of the HBT, and how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics. - The book deals with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace. XI,401 Seiten mit zahlreichen Tab. und Abb., gebunden (Series in Optics and Optoelectronics/IOP Institute of Physics Publishing 2001). Gewicht: 850 g - Gebunden/Gebundene Ausgabe. N° de réf. du vendeur 378112
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Vendeur : Chiron Media, Wallingford, Royaume-Uni
hardcover. Etat : New. N° de réf. du vendeur 6666-TNFPD-9780750307239
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Vendeur : GreatBookPricesUK, Woodford Green, Royaume-Uni
Etat : New. N° de réf. du vendeur 372803-n
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Vendeur : GreatBookPrices, Columbia, MD, Etats-Unis
Etat : New. N° de réf. du vendeur 372803-n
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Vendeur : Majestic Books, Hounslow, Royaume-Uni
Etat : New. pp. 437 This item is printed on demand. N° de réf. du vendeur 8373428
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Vendeur : Books Puddle, New York, NY, Etats-Unis
Etat : New. pp. 437. N° de réf. du vendeur 26555883
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Vendeur : GreatBookPricesUK, Woodford Green, Royaume-Uni
Etat : As New. Unread book in perfect condition. N° de réf. du vendeur 372803
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Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
Etat : New. In. N° de réf. du vendeur ria9780750307239_new
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Vendeur : Mispah books, Redhill, SURRE, Royaume-Uni
Hardcover. Etat : Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book. N° de réf. du vendeur ERICA75807503072345
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Vendeur : Biblios, Frankfurt am main, HESSE, Allemagne
Etat : New. pp. 437. N° de réf. du vendeur 18555873
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