Characterization in Compound Semiconductor Processing - Couverture rigide

Strausser, Yale

Couverture rigide

ISBN 10 : 0750692669 ISBN 13 : 9780750692663

Editeur : Butterworth-Heinemann Ltd, 1994

Synopsis

This volume focusses on the characterization of semiconductor materials and other materials used in the manufacture of microelectronic or optoelectronic devices. It addresses the use of materials characterization tools in solving problems relating to surfaces, interfaces, and thin films of these materials. The book has two major sections, one on Si based systems and the other on compound semiconductor systems. Although there are many materials common to both technologies, the applications, processing, and problems seen, are different enough to warrant this separation. In the silicon section there is a chapter on semiconducting layers, such as epi SI, SOI layers, Si Ge films discussing the techniques used in problem-solving in these films. In the area of conducting films there are chapters of doped poly Si, silicide and polycides, Al- and/or Cu-cased films, W-based films and one on barrier materials. Each of these systems is sufficiently different to benefit from a different author and a separate discussion of the many problems encountered. This section is then be completed by a chapter or dielectric Mm. Even though there are a number of different applications for dielectrics, i.e. passivation films, intermetal dielectrics, gate oxides, field oxides, and different materials used, e. g. thermal SiO2, PECVD Si3N4, PECVD SiO2, silicon oxynitride, reoxidized Nitrided oxide (RONO), etc., the characterisations required on these films to solve common problems are similar enough to be addressed in one chapter. The compound semiconductor section has similar organization. In this case, the semiconductor film area is divided into three chapters: One on M - V films for electronics applications; one on IH - V films for optical applications; and one on other compound semiconductor films, including primarily 11 - VI films. The material systems and applications of these films sufficiently different to require separate treatment. A chapter on contacts, including both ohmic contacts and Schottky barriers, is useful in the treatment of compound semiconductors. There is a chapter on the conductors used for interconnects.

A propos du livre

Présentation de l'éditeur

Compound semiconductors such as Gallium Arsenide, Gallium Aluminum Arsenide, and Indium Phosphide are often difficult to characterize and present a variety of challenges from substrate preparation, to epitaxial growth to dielectric film deposition to dopant introduction. This book reviews the common classes of compound semiconductors, their physical, optical and electrical properties and the various types of methods used for characterizing them when analyzing for defects and application problems. The book features: characterization of III-V thin films for electronic and optical applications; characterization of dielectric insulating film layers; a special case study on deep level transient spectroscopy on GaAs; and, concise summaries of major characterization technologies for compound semiconductor materials, including Auger Electron Spectroscopy, Ballistic Electron Emission Microscopy, Energy-Dispersive X-Ray Spectroscopy, Neutron Activation Analysis and Raman Spectroscopy.

Détails de l'édition

• Éditeur: Butterworth-Heinemann Ltd
• Date d'édition: 1994
• Langue: anglais
• ISBN 10: 0750692669
• ISBN 13: 9780750692663
• Reliure: Relié
• Nombre de pages: 250
• Coordonnées du fabricant: non disponible
• Personne responsable: non disponible