Articles liés à Hot-Carrier Reliability of Mos Vlsi Circuits
Synopsis
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada- tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down- ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability: Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
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Hot-Carrier Reliability of MOS VLSI Circuits
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Springer, 1993
ISBN 10 : 079239352X
ISBN 13 : 9780792393528
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Vendeur : Better World Books Ltd, Dunfermline, Royaume-Uni
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Etat : Good. Ships from the UK. Former library book; may include library markings. Used book that is in clean, average condition without any missing pages. N° de réf. du vendeur 15549732-6
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Hot-Carrier Reliability of MOS VLSI Circuits
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Gebunden. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be. N° de réf. du vendeur 5971429
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Hot-Carrier Reliability of Mos Vlsi Circuits
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Hot-Carrier Reliability of MOS VLSI Circuits (The Springer International Series in Engineering and Computer Science, 227)
Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
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Hot-Carrier Reliability of MOS VLSI Circuits
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Springer US Jun 1993, 1993
ISBN 10 : 079239352X
ISBN 13 : 9780792393528
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
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Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation. 234 pp. Englisch. N° de réf. du vendeur 9780792393528
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Hot-Carrier Reliability of MOS VLSI Circuits
Edité par
Springer US, Springer US Jun 1993, 1993
ISBN 10 : 079239352X
ISBN 13 : 9780792393528
Neuf
Couverture rigide
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Buch. Etat : Neu. Neuware -As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 234 pp. Englisch. N° de réf. du vendeur 9780792393528
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Hot-Carrier Reliability of MOS VLSI Circuits
Edité par
Springer US, Springer US, 1993
ISBN 10 : 079239352X
ISBN 13 : 9780792393528
Neuf
Couverture rigide
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
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Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation. N° de réf. du vendeur 9780792393528
Quantité disponible : 1 disponible(s)
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Hot-Carrier Reliability of Mos Vlsi Circuits
Edité par
Springer, 1993
ISBN 10 : 079239352X
ISBN 13 : 9780792393528
Ancien ou d'occasion
Couverture rigide
Vendeur : GreatBookPrices, Columbia, MD, Etats-Unis
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Etat : As New. Unread book in perfect condition. N° de réf. du vendeur 757952
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Hot-Carrier Reliability of MOS VLSI Circuits (The Springer International Series in Engineering and Computer Science, 227)
Vendeur : Lucky's Textbooks, Dallas, TX, Etats-Unis
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Etat : New. N° de réf. du vendeur ABLIING23Feb2416190185844
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Hot-Carrier Reliability of MOS VLSI Circuits (Hardcover)
Edité par
Kluwer Academic Publishers, Dordrecht, 1993
ISBN 10 : 079239352X
ISBN 13 : 9780792393528
Neuf
Couverture rigide
Vendeur : Grand Eagle Retail, Bensenville, IL, Etats-Unis
Évaluation du vendeur 5 sur 5 étoiles
Hardcover. Etat : new. Hardcover. This volume addresses the issues related to hot-carrier reliability of MOS VLSI circuits, ranging from device physics to circuit design guidelines. It presents a unified view of the physical mechanisms involved in hot-carrier induced device degradation, the prevalent models for these mechanisms, and simulation methods for estimating hot-carrier effects in the circuit environment. The newly emerging approaches to the VLSI design-for-reliability and rule-based reliability diagnosis are also discussed in detail. Hot-Carrier Reliability of MOS VLSI Circuits is primarily for use by engineers and scientists who study device and circuit-level reliability in VLSI systems and develop practical reliability measures and models. VLSI designers will benefit from this book since it offers a comprehensive overview of the interacting mechanisms that influence hot-carrier reliability, and also provides useful guidelines for reliable VLSI design. This volume can be used as an advanced textbook or reference for a graduate-level course on VLSI reliability. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. N° de réf. du vendeur 9780792393528
Quantité disponible : 1 disponible(s)