The Mocvd Challenge: A Survey of Gainasp-Inp. for Photonic and Electronic Applications - Couverture rigide

Razeghi, Manijeh

 
9780852741610: The Mocvd Challenge: A Survey of Gainasp-Inp. for Photonic and Electronic Applications
Couverture rigide
ISBN 10 : 0852741618 ISBN 13 : 9780852741610
Editeur : Institute of Physics Publishing, 1989

Synopsis

The MOCVD Challenge describes how to use MOCVD to grow materials and devices, in particular indium phosphide, gallium indium arsenide and gallium indium arseno phosphide. It contains detailed descriptions of reactors, starting materials and growth conditions. It discusses lattice-matched materials, strained layers and growth on non-matched substrates such as silicon. It includes results which include the growth, characterization, application of heterojunctions, quantum wells and superlattices based on these compounds. It concludes with applications for indium phosphide semiconductors such as lasers and photodetectors and for electronic components such as optical fibres and satellite communication systems. Together with The MOCVD Challenge: Volume 2 it forms a valuable reference for users of MOCVD, and those evaluating MOCVD for use in their research. Written for physicists, materials scientists, electronics and electrical engineers involved in semiconducting materials and as-grown device research.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

The MOCVD Challenge describes how to use MOCVD to grow materials and devices, in particular indium phosphide, gallium indium arsenide and gallium indium arseno phosphide. It contains detailed descriptions of reactors, starting materials and growth conditions. It discusses lattice-matched materials, strained layers and growth on non-matched substrates such as silicon. It includes results which include the growth, characterization, application of heterojunctions, quantum wells and superlattices based on these compounds. It concludes with applications for indium phosphide semiconductors such as lasers and photodetectors and for electronic components such as optical fibres and satellite communication systems. Together with The MOCVD Challenge: Volume 2 it forms a valuable reference for users of MOCVD, and those evaluating MOCVD for use in their research. Written for physicists, materials scientists, electronics and electrical engineers involved in semiconducting materials and as-grown device research.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
Institute of Physics Publishing
Date d'édition
1989
Langue
anglais
ISBN 10 
0852741618
ISBN 13 
9780852741610
Reliure
Relié
Nombre de pages
340
Coordonnées du fabricant
non disponible
Personne responsable
Buchpark GmbH
gpsr@buchpark.de

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