Properties of Lattice-Matched and Strained Indium Gallium Arsenide - Couverture rigide

Couverture rigide

ISBN 10 : 0852968655 ISBN 13 : 9780852968659

Editeur : Institution of Engineering and Technology, 1993

Synopsis

The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.

Détails de l'édition

• Éditeur: Institution of Engineering and Technology
• Date d'édition: 1993
• Langue: anglais
• ISBN 10: 0852968655
• ISBN 13: 9780852968659
• Reliure: Relié
• Nombre de pages: 340
• Éditeur: Bhattacharya P. K.
• Coordonnées du fabricant: non disponible
• Personne responsable: non disponible