3D Integration of Resistive Switching Memory - Couverture souple

 
9781032489506: 3D Integration of Resistive Switching Memory
Couverture souple
ISBN 10 : 1032489502 ISBN 13 : 9781032489506
Editeur : CRC Press, 2024

Synopsis

This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications.

Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:


1: Associative Problems in Crossbar array and 3D architectures;
2: Selector Devices and Self-Selective Cells;
3: Integration of 3D RRAM;
4: Reliability Issues in 3D RRAM;
5: Applications of 3D RRAM beyond Storage.

The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

À propos de l?auteur

Qing Luo received his Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China, in 2017. He is currently Professor at the Key Laboratory of Microelectronics Devices and Integrated Technology in IMECAS. His research interests are emerging memory devices including resistive RAM devices and ferroelectric memory devices.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
CRC Press
Date d'édition
2024
Langue
anglais
ISBN 10 
1032489502
ISBN 13 
9781032489506
Reliure
Broché
Nombre de pages
106
Éditeur
Luo Qing
Coordonnées du fabricant
non disponible
Personne responsable
gpsr@libri.de
gpsr@libri.de

Friedensallee 273
Hamburg
22763
Allemagne

Autres éditions populaires du même titre

9781032489438: 3D Integration of Resistive Switching Memory

Edition présentée

ISBN 10 :  103248943X ISBN 13 :  9781032489438
Editeur : CRC Press, 2023
Couverture rigide