Covering a wide spectrum of semiconductor technologies, this book offers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), fin field-effect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin film transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability.
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Charvaka Duvvury is a Texas Instruments Fellow-Emeritus and a Life Fellow of the Institute of Electrical and Electronics Engineers (IEEEs). He received the Education Award from IEEE Electron Devices Society (EDS) and the Outstanding Contributions Award from the Electrical Overstress (EOS)/ESD Association. He is a cofounder and co-chair of the Industry Council on ESD Target Levels.
Harald Gossner is a Senior Principal Engineer at Intel and an IEEE Fellow in the field of ESD. He is the recipient of the Outstanding Contributions Award of the EOS/ESD Association for his contributions to the field of ESD. He is the cofounder and co-chair of the Industry Council on ESD Target Levels.
Mayank Shrivastava is the Professor & Chair of the Department of Electronic Systems Engineering at the Indian Institute of Science, Bangalore, and an IEEE Fellow. He is also the cofounder of a deep-tech semiconductor startup and is an internationally recognized leader in semiconductor technology with over 290 publications, over 65 patents, and more than 25 prestigious awards.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
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Hardcover. Etat : new. Hardcover. Covering a wide spectrum of semiconductor technologies, this book oers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), n eld-eect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability. Synthesizing experience from industry and academia, this book addresses practical ESD design principles and real-world reliability challenges in advanced CMOS, FinFETs, GaN HEMTs, carbon nanostructures and TFT technologies. Ideal for professional and academic engineers working in device physics and design. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. N° de réf. du vendeur 9781107089051
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Hardback. Etat : New. Covering a wide spectrum of semiconductor technologies, this book o?ers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), ?n ?eld-e?ect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin ?lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability. N° de réf. du vendeur LU-9781107089051
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Hardback. Etat : New. Covering a wide spectrum of semiconductor technologies, this book o?ers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), ?n ?eld-e?ect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin ?lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability. N° de réf. du vendeur LU-9781107089051
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Hardcover. Etat : new. Hardcover. Covering a wide spectrum of semiconductor technologies, this book oers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), n eld-eect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin lm transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability. Synthesizing experience from industry and academia, this book addresses practical ESD design principles and real-world reliability challenges in advanced CMOS, FinFETs, GaN HEMTs, carbon nanostructures and TFT technologies. Ideal for professional and academic engineers working in device physics and design. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. N° de réf. du vendeur 9781107089051
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