Terrestrial Radiation Effects in ULSI Devices and Electronic Systems - Couverture rigide

Ibe, Eishi H.

Couverture rigide

ISBN 10 : 1118479297 ISBN 13 : 9781118479292

Editeur : Wiley-IEEE Press, 2015

Synopsis

This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions. Readers will learn how to make numerical models from physical insights, to determine the kind of mathematical approaches that should be implemented to analyze radiation effects. A wide variety of prediction, detection, characterization and mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them, and explains how electronic systems including servers and routers are shut down due to environmental radiation.

• Provides an understanding of how electronic systems are shut down due to environmental radiation by constructing physical models and numerical algorithms
• Covers both terrestrial and avionic-level conditions
• Logically presented with each chapter explaining the background physics to the topic followed by various modelling techniques, and chapter summary
• Written by a widely-recognized authority in soft-errors in electronic devices
• Code samples available for download from the Companion Website

This book is targeted at researchers and graduate students in nuclear and space radiation, semiconductor physics and electron devices, as well as other areas of applied physics modelling. Researchers and students interested in how a variety of physical phenomena can be modelled and numerically treated will also find this book to present helpful methods.

A propos du livre

À propos de l'auteur

Eishi, H. Ibe, Chief Researcher, Yokohama Research Laboratory, Hitachi, Ltd.
Dr.Eishi Hidefumi IBE received his Ph.D degree in Nuclear Engineering from Osaka University, Japan in 1985. His expertise covers a wide area of science, such as elementary particle/cosmic ray physics, nuclear /neutron physics, semiconductor physics, mathematics and computing technologies, ion-implantation/mixing and accelerator technologies, electro-chemistry, data-base handling, and BS/Auger/SEM/
Laser-beam micro analysis. He has authored more than 90 international technical papers and presentations including 22 invited contributions in the field of radiation effects.
Dr.Ibe was elevated to IEEE Fellow for contributions to analysis of soft-errors in memory devices in 2008.

Détails de l'édition

• Éditeur: Wiley-IEEE Press
• Date d'édition: 2015
• Langue: anglais
• ISBN 10: 1118479297
• ISBN 13: 9781118479292
• Reliure: Relié
• Nombre de pages: 296
• Coordonnées du fabricant: JOSSEY-BASS; https://www.wiley.com/en-us; ; 111 River Street; Hoboken; NJ; 7030; Etats-Unis
• Personne responsable: Wiley-VCH GmbH; product_safety@wiley.com; ; Boschstrasse 12; Weinheim; 69469; Allemagne