A comprehensive one-volume reference on current JLFET methods, techniques, and research
Advancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs
This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource:
Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
SHUBHAM SAHAY, PHD, is a Post-Doctoral Research Scholar in the Department of Electrical and Computer Engineering, University of California, Santa Barbara. He has authored several peer-reviewed journal articles on topics including semiconductor device design and modeling and unconventional applications of emerging non-volatile memories.
MAMIDALA JAGADESH KUMAR, PHD, is a Professor at the Indian Institute of Technology, New Delhi and Vice-Chancellor of Jawaharlal Nehru University, New Delhi. He is Editor-in-Chief of IETE Technical Review and has widely published in the area of Micro/Nanoelectronics.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
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Hardcover. Etat : new. Hardcover. A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolutionmany cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFETExamines various approaches for analytical and compact modeling of JLFETs in circuit design and simulationExplains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETsSuggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. N° de réf. du vendeur 9781119523536
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Hardcover. Etat : new. Hardcover. A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolutionmany cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFETExamines various approaches for analytical and compact modeling of JLFETs in circuit design and simulationExplains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETsSuggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. N° de réf. du vendeur 9781119523536
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