Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors - Couverture souple

Uhlman, Troy A

Couverture souple

ISBN 10 : 1249836565 ISBN 13 : 9781249836568

Editeur : Biblioscholar, 2012

Synopsis

In this research, the first ever neutron irradiation study of AlGaN/GaN MODFETs was conducted. Devices irradiated to a total 1 MeV Eq (Si) neutron fluence of 1.2x10 16 n/cm2 demonstrated the temperature dependence of irradiation and annealing. Devices irradiated at 80 K exhibited significant persistent electrical degradation at only 5.4 rad (Si), whereas those irradiated at elevated temperatures exhibit transient increases in gate and drain current up to 400 krad (Si). I-V measurements indicate substantial radiation-induced increased gate and drain currents occur only at low-temperature irradiations. The introduction of a high-density of donor defects is hypothesized as the primary cause of both increased values. Irradiating at temperatures gt; 300 K effectively reduces total accumulated dose effects even at 400 krad(Si).

Détails de l'édition

• Éditeur: Biblioscholar
• Date d'édition: 2012
• Langue: anglais
• ISBN 10: 1249836565
• ISBN 13: 9781249836568
• Reliure: Broché
• Nombre de pages: 192
• Coordonnées du fabricant: non disponible
• Personne responsable: non disponible