Articles liés à Investigation of Gate Current In Neutron Irradiated...

Investigation of Gate Current In Neutron Irradiated AlxGa1-xN/GaN Heterogeneous Field Effect Transistors Using Voltage and Temperature Dependence - Couverture souple

Gray, Thomas E

 
9781288308347: Investigation of Gate Current In Neutron Irradiated AlxGa1-xN/GaN Heterogeneous Field Effect Transistors Using Voltage and Temperature Dependence
Couverture souple
ISBN 10 : 1288308345 ISBN 13 : 9781288308347
Editeur : BiblioBazaar, LLC, 2012

Synopsis

The gate current of Al27Ga73N/GaN heterogeneous field effect transistors (HFETs) is investigated using current-voltage (IV) and current-temperature (IT) measurement demonstrating that trap assisted tunneling (TAT) is the primary current mechanism. Excellent fit to experimental data is achieved using a thermionic trap assisted tunneling (TTT) model. A single value for each of the primary parameters (Schottky barrier height, trap energy, donor density and trap density) results in a sigma of 1.38x10-8 A for IT data measured at five voltages between 85K and 290K and for IV data measured at three temperatures between 0.0 V and -4.0 V. High energy (gt;0.5 MeV) neutron irradiation at fluences between 4.0x1010 and 1.2x1012 n/cm2 confirms an increase of gate current with fluence. A change in IV characteristics, interpreted as an increase in magnitude of threshold voltage, is also observed.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Éditeur
BiblioBazaar, LLC
Date d'édition
2012
Langue
anglais
ISBN 10 
1288308345
ISBN 13 
9781288308347
Reliure
Broché
Nombre de pages
126
Coordonnées du fabricant
non disponible
Personne responsable
GPSR Kontakt
gpsr@libri.de

Europaallee 1
Bad Hersfeld
36244
Allemagne