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The goal of this NATO Advanced Research Workshop (ARW) entitled "Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices", which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
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Defects in HIgh-k Gate Dielectric Stacks. Nano-Electronic Semiconductor Devices.
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16 x 23 cm. XII, 492 S. XI, 492 p. Softcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. (NATO Science Series II: Mathematics, Physics and Chemistry). Sprache: Englisch. N° de réf. du vendeur 2668VB
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Defects in HIgh-k Gate Dielectric Stacks : Nano-Electronic Semiconductor Devices
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Springer Netherlands, 2006
ISBN 10 : 140204366X
ISBN 13 : 9781402043666
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Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices (NATO Science Series II: Mathematics, Physics and Chemistry, 220)
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Defects in HIgh-k Gate Dielectric Stacks
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Springer Netherlands, 2006
ISBN 10 : 140204366X
ISBN 13 : 9781402043666
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Kartoniert / Broschiert. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Research Workshop on Defects in Advanced High-K Dielectric Nano-Electronic Semiconductor Devices, St. Petersburg, Russia, from 11 to 14 July 2005.|To the best of our knowledge, this is the first focused collection of pape. N° de réf. du vendeur 4093723
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Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices (NATO Science Series II: Mathematics, Physics and Chemistry, 220)
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Defects in HIgh-k Gate Dielectric Stacks
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Springer Netherlands Jan 2006, 2006
ISBN 10 : 140204366X
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The goal of this NATO Advanced Research Workshop (ARW) entitled 'Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices', which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market. 508 pp. Englisch. N° de réf. du vendeur 9781402043666
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Defects in HIgh-k Gate Dielectric Stacks
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Springer Netherlands, Springer Netherlands Jan 2006, 2006
ISBN 10 : 140204366X
ISBN 13 : 9781402043666
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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The goal of this NATO Advanced Research Workshop (ARW) entitled ¿Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices¿, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 508 pp. Englisch. N° de réf. du vendeur 9781402043666
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Defects in HIgh-k Gate Dielectric Stacks
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Etat : New. pp. 508. N° de réf. du vendeur 26320268
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Defects in HIgh-k Gate Dielectric Stacks : Nano-Electronic Semiconductor Devices
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Springer Netherlands, Springer Netherlands, 2006
ISBN 10 : 140204366X
ISBN 13 : 9781402043666
Neuf
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
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Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - The goal of this NATO Advanced Research Workshop (ARW) entitled 'Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices', which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market. N° de réf. du vendeur 9781402043666
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Defects in HIgh-k Gate Dielectric Stacks
impression à la demandeVendeur : Majestic Books, Hounslow, Royaume-Uni
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Etat : New. Print on Demand pp. 508 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam. N° de réf. du vendeur 7560403
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