Transistor Level Modeling for Analog/ RF IC Design - Couverture rigide

Couverture rigide

ISBN 10 : 1402045557 ISBN 13 : 9781402045554

Editeur : Springer-Verlag New York Inc., 2006

Synopsis

The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling.

The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

A propos du livre

À propos de l'auteur

Dr. Grabinski, Dr. Nauwelaers and Dr. Scheurs organized the MOS-Modeling workshop at the European Solid-State Devices Conference (ESSDERC) in 2004, and due to popular request will do again at ESSDERC 2005 in Grenoble. Dr. Grabinski is in industry, at Freescale Semiconductor, while Dr. Nauwelaers and Dr. Schreurs are in academia.

Détails de l'édition

• Éditeur: Springer-Verlag New York Inc.
• Date d'édition: 2006
• Langue: anglais
• ISBN 10: 1402045557
• ISBN 13: 9781402045554
• Reliure: Relié
• Nombre de pages: 291
• Éditeur: Grabinski Wladyslaw, Nauwelaers Bart, Schreurs Dominique
• Coordonnées du fabricant: non disponible
• Personne responsable: ProductSafety@springernature.com; ProductSafety@springernature.com; ; Europaplatz 3; Heidelberg; 69115; Allemagne