Transistor Level Modeling for Analog/ RF IC Design - Couverture rigide

Couverture rigide

ISBN 10 : 1402045557 ISBN 13 : 9781402045554

Editeur : Springer-Verlag New York Inc., 2006

Synopsis

This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.

A propos du livre

À propos de l?auteur

Dr. Grabinski, Dr. Nauwelaers and Dr. Scheurs organized the MOS-Modeling workshop at the European Solid-State Devices Conference (ESSDERC) in 2004, and due to popular request will do again at ESSDERC 2005 in Grenoble. Dr. Grabinski is in industry, at Freescale Semiconductor, while Dr. Nauwelaers and Dr. Schreurs are in academia.

Détails de l'édition

• Éditeur: Springer-Verlag New York Inc.
• Date d'édition: 2006
• Langue: anglais
• ISBN 10: 1402045557
• ISBN 13: 9781402045554
• Reliure: Relié
• Nombre de pages: 308
• Éditeur: Grabinski Wladyslaw, Nauwelaers Bart, Schreurs Dominique
• Coordonnées du fabricant: non disponible
• Personne responsable: CMN Printpool Inh. Mathis Neumann; https://www.also.com/ec/cms5/en_6000/6000/index.jsp; ; Friedrich-Karl-Str. 9; Hamburg; Allemagne