Atomic Scale Characterization and First-Principles Studies of Si3N4 - Couverture rigide

Name: Atomic Scale Characterization and First-Principles Studies of Si3N4
Author: Walkosz, Weronika
ISBN: 9781441978165

Walkosz, Weronika

9781441978165: Atomic Scale Characterization and First-Principles Studies of Si3N4

Couverture rigide

ISBN 10 : 144197816X ISBN 13 : 9781441978165

Editeur : Springer-Verlag New York Inc., 2011

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This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β-Si₃N₄ and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.

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�diteur: Springer-Verlag New York Inc.
Date d'�dition: 2011
Langue: anglais
ISBN 10: 144197816X
ISBN 13: 9781441978165
Reliure: Reli�
Nombre de pages: 124
Coordonn�es du fabricant: Springer Nature Customer Service Center GmbH
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Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces (eng)

Walkosz, Weronika

Edit� par Springer, 2011

ISBN 10 : 144197816X ISBN 13 : 9781441978165

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Atomic Scale Characterization and First-Principles Studies of Si�N� Interfaces

Weronika Walkosz

Edit� par Springer New York Apr 2011, 2011

ISBN 10 : 144197816X ISBN 13 : 9781441978165

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Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline beta-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. 124 pp. Englisch. N� de r�f. du vendeur 9781441978165

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Atomic Scale Characterization and First-Principles Studies of Si3N4 Interfaces

Weronika Walkosz

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ISBN 10 : 144197816X ISBN 13 : 9781441978165

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Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces

Weronika Walkosz

Edit� par Springer-Verlag New York Inc., US, 2011

ISBN 10 : 144197816X ISBN 13 : 9781441978165

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Hardback. Etat : New. This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ??Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF).� These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications.� The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before.� The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. N� de r�f. du vendeur LU-9781441978165

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Atomic Scale Characterization and First-Principles Studies of Si�N� Interfaces

Weronika Walkosz

Edit� par Springer, 2011

ISBN 10 : 144197816X ISBN 13 : 9781441978165

Neuf Couverture rigide

Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne

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Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline beta-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. N� de r�f. du vendeur 9781441978165

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Atomic Scale Characterization and First-Principles Studies of Si�N� Interfaces

Weronika Walkosz

Edit� par Springer, Springer Apr 2011, 2011

ISBN 10 : 144197816X ISBN 13 : 9781441978165

Neuf Couverture rigide

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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne

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Buch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ��Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 124 pp. Englisch. N� de r�f. du vendeur 9781441978165

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