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This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.
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Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
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Springer New York, 2011
ISBN 10 : 144197816X
ISBN 13 : 9781441978165
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Etat : Sehr gut. Zustand: Sehr gut | Seiten: 124 | Sprache: Englisch | Produktart: Sonstiges. N° de réf. du vendeur 9300983/12
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Atomic Scale Characterization and First-Principles Studies of Si3N4 Interfaces
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Springer New York, 2011
ISBN 10 : 144197816X
ISBN 13 : 9781441978165
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Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
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Springer New York Apr 2011, 2011
ISBN 10 : 144197816X
ISBN 13 : 9781441978165
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
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Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline beta-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. 124 pp. Englisch. N° de réf. du vendeur 9781441978165
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Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces (Springer Theses)
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Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
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Springer New York, Springer US Apr 2011, 2011
ISBN 10 : 144197816X
ISBN 13 : 9781441978165
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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
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Buch. Etat : Neu. Neuware -This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ¿¿Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 124 pp. Englisch. N° de réf. du vendeur 9781441978165
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Atomic Scale Characterization and First-Principles Studies of Si¿N¿ Interfaces
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Springer New York, Springer US, 2011
ISBN 10 : 144197816X
ISBN 13 : 9781441978165
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
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Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline beta-Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. N° de réf. du vendeur 9781441978165
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Atomic Scale Characterization and First-Principles Studies of Si3N4 Interfaces
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Springer-Verlag New York Inc., 2011
ISBN 10 : 144197816X
ISBN 13 : 9781441978165
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Atomic Scale Characterization and First-principles Studies of Silicon Nitride Interfaces
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Hardcover. Etat : Brand New. 108 pages. 9.75x6.50x0.50 inches. In Stock. N° de réf. du vendeur x-144197816X
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Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces (Springer Theses)
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Atomic Scale Characterization and First-Principles Studies of Si?N? Interfaces (Springer Theses)
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