Articles liés à Quantum Transport in Ultrasmall Devices: Proceedings...
Quantum Transport in Ultrasmall Devices: Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17–30, 1994, in II Ciocco, Italy - Couverture souple
Synopsis
The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size < 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
Acheter neuf
Afficher cet article
EUR 180,07
EUR 9,70 expédition depuis Allemagne vers France
Destinations, frais et délais
Résultats de recherche pour Quantum Transport in Ultrasmall Devices: Proceedings...
Image fournie par le vendeur
Quantum Transport in Ultrasmall Devices
impression à la demandeVendeur : moluna, Greven, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of a NATO ASI held in Il Ciocco, Italy, July 17-30, 1994 The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) an. N° de réf. du vendeur 4194029
Quantité disponible : Plus de 20 disponibles
Image d'archives
Quantum Transport in Ultrasmall Devices: Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17-30, 1994, in II Ciocco, Italy (NATO Science Series B:)
Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. In. N° de réf. du vendeur ria9781461358091_new
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
Quantum Transport in Ultrasmall Devices
Edité par
Springer US, Springer US Okt 2012, 2012
ISBN 10 : 1461358094
ISBN 13 : 9781461358091
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a 'best' device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 sizeSpringer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 556 pp. Englisch. N° de réf. du vendeur 9781461358091
Quantité disponible : 1 disponible(s)
Image fournie par le vendeur
Quantum Transport in Ultrasmall Devices : Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17¿30, 1994, in II Ciocco, Italy
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a 'best' device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations. N° de réf. du vendeur 9781461358091
Quantité disponible : 1 disponible(s)
Image d'archives
Quantum Transport in Ultrasmall Devices: Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17-30, 1994, in II Ciocco, Italy (NATO Science Series B:)
Vendeur : Lucky's Textbooks, Dallas, TX, Etats-Unis
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. N° de réf. du vendeur ABLIING23Mar2716030032506
Quantité disponible : Plus de 20 disponibles
Image d'archives
Quantum Transport in Ultrasmall Devices: Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17-30, 1994, in II Ciocco, Italy (NATO Science Series B:)
Vendeur : Best Price, Torrance, CA, Etats-Unis
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. SUPER FAST SHIPPING. N° de réf. du vendeur 9781461358091
Quantité disponible : 1 disponible(s)
Image fournie par le vendeur
Quantum Transport in Ultrasmall Devices
impression à la demandeVendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a 'best' device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations. 556 pp. Englisch. N° de réf. du vendeur 9781461358091
Quantité disponible : 2 disponible(s)
Image d'archives
Quantum Transport in Ultrasmall Devices
Vendeur : Books Puddle, New York, NY, Etats-Unis
Évaluation du vendeur 4 sur 5 étoiles
Etat : New. pp. 556 Index. N° de réf. du vendeur 2697848373
Quantité disponible : 4 disponible(s)
Image d'archives
Quantum Transport in Ultrasmall Devices
impression à la demandeVendeur : Majestic Books, Hounslow, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. Print on Demand pp. 556 66:B&W 7 x 10 in or 254 x 178 mm Perfect Bound on White w/Gloss Lam. N° de réf. du vendeur 94548970
Quantité disponible : 4 disponible(s)
Image d'archives
Quantum Transport in Ultrasmall Devices
impression à la demandeVendeur : Biblios, Frankfurt am main, HESSE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. PRINT ON DEMAND pp. 556. N° de réf. du vendeur 1897848383
Quantité disponible : 4 disponible(s)