Synopsis
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
Autres éditions populaires du même titre
Résultats de recherche pour The Physics and Chemistry of SiO2 and the Si-SiO2 Interface...
Image d'archives
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Vendeur : Lucky's Textbooks, Dallas, TX, Etats-Unis
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. N° de réf. du vendeur ABLIING23Mar2716030157446
Acheter neuf
EUR 205,01
Frais de port :
EUR 3,44
Vers Etats-Unis
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
impression à la demandeVendeur : moluna, Greven, Allemagne
Évaluation du vendeur 4 sur 5 étoiles
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the Electronics and Dielectrics Science Divisions of the Electrochemical Society s Second Symposium on the Physics and Chemistry of the SiO2 and the Si-SiO2 Interface held in St. Louis, Missouri, May 18-21, 1992 The first international. N° de réf. du vendeur 4211733
Acheter neuf
EUR 180,07
Frais de port :
EUR 48,99
De Allemagne vers Etats-Unis
Quantité disponible : Plus de 20 disponibles
Image d'archives
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. In. N° de réf. du vendeur ria9781489915900_new
Acheter neuf
EUR 223,55
Frais de port :
EUR 13,60
De Royaume-Uni vers Etats-Unis
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Edité par
Springer US, Springer US Nov 2013, 2013
ISBN 10 : 1489915907
ISBN 13 : 9781489915900
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The first international symposium on the subject 'The Physics and Chemistry of Si02 and the Si-Si02 Interface,' organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on 'The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 520 pp. Englisch. N° de réf. du vendeur 9781489915900
Acheter neuf
EUR 213,99
Frais de port :
EUR 60
De Allemagne vers Etats-Unis
Quantité disponible : 1 disponible(s)
Image fournie par le vendeur
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - The first international symposium on the subject 'The Physics and Chemistry of Si02 and the Si-Si02 Interface,' organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on 'The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces. N° de réf. du vendeur 9781489915900
Acheter neuf
EUR 223,11
Frais de port :
EUR 63,90
De Allemagne vers Etats-Unis
Quantité disponible : 1 disponible(s)
Image fournie par le vendeur
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
impression à la demandeVendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The first international symposium on the subject 'The Physics and Chemistry of Si02 and the Si-Si02 Interface,' organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on 'The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces. 520 pp. Englisch. N° de réf. du vendeur 9781489915900
Acheter neuf
EUR 277,13
Frais de port :
EUR 23
De Allemagne vers Etats-Unis
Quantité disponible : 2 disponible(s)
Image d'archives
The Physics and Chemistry of Sio2 and the Si-sio2 Interface 2
Vendeur : Revaluation Books, Exeter, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Paperback. Etat : Brand New. reprint edition. 519 pages. 9.25x6.10x1.05 inches. In Stock. N° de réf. du vendeur x-1489915907
Acheter neuf
EUR 303,52
Frais de port :
EUR 14,19
De Royaume-Uni vers Etats-Unis
Quantité disponible : 2 disponible(s)