Articles liés à Gate Stack and Silicide Issues in Silicon: Volume 670
Synopsis
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 2002.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
Présentation de l'éditeur
As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book, first published in 2002, attempts to find a replacement for silicon dioxide. Hafnium dioxide, zirconium dioxide, and their silicates and aluminates are the subjects of intense scrutiny, but other materials are being considered as well. Obtaining a suitable large capacitance, while simultaneously obtaining low charge density in the film, and finding a material that has adequate thermal stability is proving difficult. Real-time electron microscopy of metal-silicon reactions is providing valuable new insights. Topics include: high-K materials; processing of high-K gate dielectrics; gate stack and silicide issues in Si processing; electrical performance of novel gate dielectrics; novel gate structures; novel silicide processes; and shallow junctions and integration issues in FEOL.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
Résultats de recherche pour Gate Stack and Silicide Issues in Silicon: Volume 670
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Gate Stack and Silicide Issues in Silicon Processing II : Symposium Held April 17-19, 2001, San Francisco, California, U. S. A.
Edité par
Materials Research Society, Warrendale, Pennsylvania, 2002
ISBN 10 : 1558996060
ISBN 13 : 9781558996069
Ancien ou d'occasion
Couverture rigide
Edition originale
Vendeur : Literary Cat Books, Machynlleth, Powys, WALES, Royaume-Uni
Évaluation du vendeur 4 sur 5 étoiles
Original Boards. Etat : As New. Etat de la jaquette : No Dust Jacket. First Edition; First Edition. With illustrations. Stamped Damaged to verso title page. Otherwise new. ; Hardcover; Octavo; As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book, first published in 2002, attempts to find a replacement for silicon dioxide. Hafnium dioxide, zirconium dioxide, and their silicates and aluminates are the subjects of intense scrutiny, but other materials are being considered as well. Obtaining a suitable large capacitance, while simultaneously obtaining low charge density in the film, and finding a material that has adequate thermal stability is proving difficult. Real-time electron microscopy of metal-silicon reactions is providing valuable new insights. Topics include: high-K materials; processing of high-K gate dielectrics; gate stack and silicide issues in Si processing; electrical performance of novel gate dielectrics; novel gate structures; novel silicide processes; and shallow junctions and integration issues in FEOL. N° de réf. du vendeur 21203
Quantité disponible : 1 disponible(s)
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Gate Stack and Silicide Issues in Silicon: Volume 670 (MRS Proceedings)
Edité par
Cambridge University Press, 2002
ISBN 10 : 1558996060
ISBN 13 : 9781558996069
Ancien ou d'occasion
Couverture rigide
Vendeur : dsmbooks, Liverpool, Royaume-Uni
Évaluation du vendeur 4 sur 5 étoiles
hardcover. Etat : Very Good. Very Good. book. N° de réf. du vendeur D8S0-3-M-1558996060-3
Quantité disponible : 1 disponible(s)