Transistor Scaling: Volume 913: Methods, Materials and Modeling - Couverture rigide

 
9781558998698: Transistor Scaling: Volume 913: Methods, Materials and Modeling
Couverture rigide
ISBN 10 : 1558998691 ISBN 13 : 9781558998698
Editeur : Cambridge University Press, 2006

Synopsis

For the past four decades, geometric scaling of silicon CMOS transistors has enabled not only an exponential increase in circuit integration density - Moore's Law - but also a corresponding enhancement in the transistor performance. Simple MOSFET geometric scaling has driven the industry to date. However, as the transistor gate lengths drop below 35nm and the gate oxide thickness is reduced to 1nm, physical limitations such as off-state leakage current and power density make geometric scaling an increasingly challenging task. In order to continue CMOS device scaling, innovations in device structures and materials are required and the industry needs a new scaling vector. Starting at the 90 and 65nm technology generation, strained silicon has emerged as one such innovation. Other device structures such as multigate FETs may be introduced to meet the scaling challenge. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

For the past four decades, geometric scaling of silicon CMOS transistors has enabled not only an exponential increase in circuit integration density -Moore's Law - but also a corresponding enhancement in the transistor performance. Simple MOSFET geometric scaling has driven the industry to date. However, as the transistor gate lengths drop below 35nm and the gate oxide thickness is reduced to 1nm, physical limitations such as off-state leakage current and power density make geometric scaling an increasingly challenging task. In order to continue CMOS device scaling, innovations in device structures and materials are required and the industry needs a new scaling vector. Starting at the 90 and 65nm technology generation, strained silicon has emerged as one such innovation. Other device structures such as multigate FETs may be introduced to meet the scaling challenge. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
Cambridge University Press
Date d'édition
2006
Langue
anglais
ISBN 10 
1558998691
ISBN 13 
9781558998698
Reliure
Relié
Nombre de pages
205
Éditeur
Thompson Scott, Nouri Faran, Lee Wen-Chin, Tsai Wilman
Coordonnées du fabricant
non disponible
Personne responsable
Avery
https://www.avery.fr/

chemin des peupliers 27
Dardilly
France

Autres éditions populaires du même titre

9781107408838: Transistor Scaling: Volume 913: Methods, Materials and Modeling

Edition présentée

ISBN 10 :  1107408830 ISBN 13 :  9781107408838
Editeur : Cambridge University Press, 2014
Couverture souple