Advancing Silicon Carbide Electronics Technology II: Core Technologies of Silicon Carbide Device Processing - Couverture souple

 
9781644900666: Advancing Silicon Carbide Electronics Technology II: Core Technologies of Silicon Carbide Device Processing
Couverture souple
ISBN 10 : 1644900661 ISBN 13 : 9781644900666
Editeur : Materials Research Forum LLC, 2020

Synopsis

The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses.

Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Éditeur
Materials Research Forum LLC
Date d'édition
2020
Langue
anglais
ISBN 10 
1644900661
ISBN 13 
9781644900666
Reliure
Broché
Nombre de pages
294
Éditeur
Zekentes Konstantinos, Vasilevskiy Konstantin
Coordonnées du fabricant
non disponible
Personne responsable
non disponible