Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals - Couverture rigide

Velichko, Oleg

Couverture rigide

ISBN 10 : 1786347156 ISBN 13 : 9781786347152

Editeur : World Scientific Europe Ltd, 2019

Synopsis

Comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with surface or interfaces is formulated in this book. A set of generalized equations that describe diffusion of impurity atoms and point defects has the form suitable for numerical solution. Based on this theory, partial diffusion models are constructed, and simulation of many doping processes used in microelectronics is carried out.

A useful tool for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics, this book gives a deep understanding of the physics of diffusion and demonstrates practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.

Détails de l'édition

• Éditeur: World Scientific Europe Ltd
• Date d'édition: 2019
• Langue: anglais
• ISBN 10: 1786347156
• ISBN 13: 9781786347152
• Reliure: Relié
• Nombre de pages: 404
• Coordonnées du fabricant: Buchpark GmbH; https://www.buchpark.de; ; Krügerweg 1; Trebbin; Brandenburg; 14959; Allemagne