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Synopsis
Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the device level to circuit level, both for drivers and power conversions architectures
Demonstrates how GaN may be a superior technology for switching devices, enabling both high frequency and high efficiency power conversion
Enables design of smaller and more efficient power supplies
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
À propos de l?auteur
Gaudenzio Meneghesso is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.
Matteo Meneghini is researcher at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. Enrico Zanoni is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
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Springer International Publishing, 2019
ISBN 10 : 3030085945
ISBN 13 : 9783030085940
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Vendeur : moluna, Greven, Allemagne
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiersDemonstrates how GaN is a superior technology for sw. N° de réf. du vendeur 287285979
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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Integrated Circuits and Systems)
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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Integrated Circuits and Systems)
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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Edité par
Springer International Publishing, Springer Nature Switzerland, 2019
ISBN 10 : 3030085945
ISBN 13 : 9783030085940
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
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Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies. N° de réf. du vendeur 9783030085940
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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
ISBN 10 : 3030085945
ISBN 13 : 9783030085940
Neuf
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies. 248 pp. Englisch. N° de réf. du vendeur 9783030085940
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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Integrated Circuits and Systems)
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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Integrated Circuits and Systems)
Vendeur : California Books, Miami, FL, Etats-Unis
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ISBN 10 : 3030085945
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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
impression à la demandeVendeur : Majestic Books, Hounslow, Royaume-Uni
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