This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal–semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor–semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
Winfried Mönch received a Dr.rer.nat. degree from the Georg-August-University of Göttingen in 1961. He spent three years in the Semiconductor Department of the AEG Research Institute Frankfurt-Main before moving to the RWTH Aachen University. There he was awarded the venia legendi for physics in 1968 and became an Associate Professor two years later. In 1974 he was appointed Professor at the University of Duisburg (since 2003 University of Duisburg-Essen) and retired in 1999. He was the first Walter Schottky Visiting Professor at Stanford University in 1981 and received the E.W. Müller Award 1984 from the University of Wisconsin-Milwaukee. He has authored two monographs on semiconductor surfaces and interfaces, which have been published in the Springer Series in Surface Sciences.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
Vendeur : Brook Bookstore On Demand, Napoli, NA, Italie
Etat : new. Questo è un articolo print on demand. N° de réf. du vendeur OSCDTGH5GH
Quantité disponible : Plus de 20 disponibles
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware 160 pp. Englisch. N° de réf. du vendeur 9783031590665
Quantité disponible : 2 disponible(s)
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. N° de réf. du vendeur 9783031590665
Quantité disponible : 1 disponible(s)
Vendeur : Books Puddle, New York, NY, Etats-Unis
Etat : New. N° de réf. du vendeur 26404691758
Quantité disponible : 4 disponible(s)
Vendeur : Majestic Books, Hounslow, Royaume-Uni
Etat : New. Print on Demand. N° de réf. du vendeur 409511153
Quantité disponible : 4 disponible(s)
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 160 pp. Englisch. N° de réf. du vendeur 9783031590665
Quantité disponible : 1 disponible(s)
Vendeur : Biblios, Frankfurt am main, HESSE, Allemagne
Etat : New. PRINT ON DEMAND. N° de réf. du vendeur 18404691748
Quantité disponible : 4 disponible(s)