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Destinations, frais et délaisVendeur : BargainBookStores, Grand Rapids, MI, Etats-Unis
Paperback or Softback. Etat : New. Three-Dimensional Simulation of Semiconductor Devices 0.41. Book. N° de réf. du vendeur BBS-9783034877329
Quantité disponible : 5 disponible(s)
Vendeur : Lakeside Books, Benton Harbor, MI, Etats-Unis
Etat : New. Brand New! Not Overstocks or Low Quality Book Club Editions! Direct From the Publisher! We're not a giant, faceless warehouse organization! We're a small town bookstore that loves books and loves it's customers! Buy from Lakeside Books! N° de réf. du vendeur OTF-S-9783034877329
Quantité disponible : Plus de 20 disponibles
Vendeur : Lucky's Textbooks, Dallas, TX, Etats-Unis
Etat : New. N° de réf. du vendeur ABLIING23Mar3113020038645
Quantité disponible : Plus de 20 disponibles
Vendeur : Revaluation Books, Exeter, Royaume-Uni
Paperback. Etat : Brand New. reprint edition. 124 pages. German language. 9.02x5.99x0.40 inches. In Stock. N° de réf. du vendeur x-3034877323
Quantité disponible : 2 disponible(s)
Vendeur : Chiron Media, Wallingford, Royaume-Uni
PF. Etat : New. N° de réf. du vendeur 6666-IUK-9783034877329
Quantité disponible : 10 disponible(s)
Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
Etat : New. In. N° de réf. du vendeur ria9783034877329_new
Quantité disponible : Plus de 20 disponibles
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The three-dimensional device simulation has become a necessary tool for the design and investigation of complex device structures. The evolution of the three-dimensional simulation tools is directly linked to the scaling of the devices and the increasing complex ity of dynamic random access memory (DRAM) cells. Scaling of MOSFET devices led to a three-dimensional geometry with effects which cannot be handled by two-dimensional simulations anymore. With increasing integration density in DRAMs the third dimen sion had to be utilized to realize the storage capacitor. The result ing leakage problems have to be investigated and the cell design optimized by means of three-dimensional simulations. This book is intended for senior undergraduate students in applied physics, electrical engineering and computational physics, as well as for scientists and engineers involved in semiconductor device re search and development. It is also intended for software engineers and all those who are concerned with simulation. The book will give an overview on the problems and activities con cerning three-dimensional device simulation, without the claim of being a classical textbook. It starts from the classical semiconduc tor equations, discusses the physical models used in device simu lation, describes the discretization and some numerical methods for solving the differential equations. The application of the three dimensional simulation to VLSI device engineering is illustrated by a few specific examples. 124 pp. Deutsch. N° de réf. du vendeur 9783034877329
Quantité disponible : 2 disponible(s)
Vendeur : Books Puddle, New York, NY, Etats-Unis
Etat : New. pp. 132. N° de réf. du vendeur 26142272570
Quantité disponible : 4 disponible(s)
Vendeur : Majestic Books, Hounslow, Royaume-Uni
Etat : New. Print on Demand pp. 132. N° de réf. du vendeur 135092197
Quantité disponible : 4 disponible(s)
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - The three-dimensional device simulation has become a necessary tool for the design and investigation of complex device structures. The evolution of the three-dimensional simulation tools is directly linked to the scaling of the devices and the increasing complex ity of dynamic random access memory (DRAM) cells. Scaling of MOSFET devices led to a three-dimensional geometry with effects which cannot be handled by two-dimensional simulations anymore. With increasing integration density in DRAMs the third dimen sion had to be utilized to realize the storage capacitor. The result ing leakage problems have to be investigated and the cell design optimized by means of three-dimensional simulations. This book is intended for senior undergraduate students in applied physics, electrical engineering and computational physics, as well as for scientists and engineers involved in semiconductor device re search and development. It is also intended for software engineers and all those who are concerned with simulation. The book will give an overview on the problems and activities con cerning three-dimensional device simulation, without the claim of being a classical textbook. It starts from the classical semiconduc tor equations, discusses the physical models used in device simu lation, describes the discretization and some numerical methods for solving the differential equations. The application of the three dimensional simulation to VLSI device engineering is illustrated by a few specific examples. N° de réf. du vendeur 9783034877329
Quantité disponible : 1 disponible(s)