Intrinsic Point Defects, Impurities, And Their Diffusion In Silicon - Couverture rigide

Livre 13 sur 17: Computational Microelectronics

Pichler, Peter

 
9783211206874: Intrinsic Point Defects, Impurities, And Their Diffusion In Silicon
Couverture rigide
ISBN 10 : 3211206876 ISBN 13 : 9783211206874
Editeur : Springer Verlag GmbH, 2004

Synopsis

Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.

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Éditeur
Springer Verlag GmbH
Date d'édition
2004
Langue
anglais
ISBN 10 
3211206876
ISBN 13 
9783211206874
Reliure
Relié
Nombre de pages
575
Coordonnées du fabricant
non disponible
Personne responsable
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Autres éditions populaires du même titre

9783709172049: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Edition présentée

ISBN 10 :  3709172047 ISBN 13 :  9783709172049
Editeur : Springer, 2012
Couverture souple