Simulation of Semiconductor Devices and Processes: Volume 5 - Couverture rigide

Couverture rigide

ISBN 10 : 3211825045 ISBN 13 : 9783211825044

Editeur : Springer Verlag GmbH, 1993

Synopsis

Challenges to Achieving Accurate Three-Dimensional Process Simulation.- Modeling Nano-Structure Devices.- About Boltzmann Equations for Transport Modeling in Semiconductors.- Applied TCAD in Mega-Bits Memory Design.- Process Flow Representation within the VISTA Framework.- A Powerful TCAD System Including Advanced RSM Techniques for Various Engineering Optimization Problems.- Modeling of VLSI MOSFET Characteristics Using Neural Networks.- Coupling a Statistical Process-Device Simulator with a Circuit Layout Extractor for a Realistic Circuit Simulation of VLSI Circuits.- Simulation of Self-Heating Effects in a Power p-i-n Diode.- Impact of Cell Geometries and Electrothermal Effects on IGBT Latch-Up in 2D-Simulation.- On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance.- 2-D Electrothermal Simulation and Failure Analysis of GTO Turn-off with Complete Chopper Circuit Parasitics.- 3D Thermal/Electrical Simulation of Breakdown in a BJT Using a Circuit Simulator and a Layout-to-Circuit Extraction Tool.- Nonlocal Oxide Injection Models.- Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields.- Efficient and Accurate Simulation of EEPROM Write Time and its Degradation Using MINIMOS.- Influence of Oxide-Damage on Degradation-Effects in Bipolar-Transistors.- The Application of Sparse Supernodal Factorization Algorithms for Structurally Symmetric Linear Systems in Semiconductor Device Simulation.- Newton-GMRES Method for Coupled Nonlinear Systems Arising in Semiconductor Device Simulation.- Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation.- Further Improvements in Nonsymmetric Hybrid Iterative Methods.- Rigorous Microscopic Drift-Diffusion Theory and its Applications to Nanostructures.- Atomistic Evaluation of Diffusion Theories for the Diffusion of Dopants in Vacancy Gradients.- Self Diffusion in Silicon Using the Ackland Potential.- Three-Dimensional Numerical Simulation for Low Dopant Diffusion in Silicon.- 3-D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors.- Improvement of Initial Solution Projection in Solving General Semiconductor Equations Including Engery Transport.- A Numerical Implementation of the Energy Balance Equations Based on Physical Considerations.- Construction of Stable Discretization Schemes for the Hydrodynamic Device Model.- Three-Dimensional Implementation of a Unified Transport Model.- Mixed-Mode Multi-Dimensional Device and Circuit Simulation.- Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions.- Simulation of High-Dose Ion Implantation-Induced Transient Diffusion and of Electrical Activation of Boron in Crystalline Silicon.- Physical Modeling of the Enhanced Diffusion of Boron Due to Ion Implantation in Thin Base npn Bipolar Transistors.- Simulation of Denuded Zone Formation in CZ Silicon.- A Closed Hydrodynamic Model for Hot-Carrier Transport in Submicron Semiconductor Devices.- Critical Assessment of Different Hydrodynamical Models for Avalanche Multiplication Calculation in Silicon Bipolar Transistors.- Dual Energy Transport Model with Coupled Lattice and Carrier Temperatures.- Inclusion of Electron-Electron Scattering in the Spherical Harmonics Expansion Treatment of the Boltzmann Transport Equation.- Quantitative 2D Stress Dependent Oxidation with Viscoelastic Model.- Oxidation Simulation and Growth Kinetics of Thin SiO2 in Pure N2O.- Accurate Simulation of Mechanical Stresses in Silicon During Thermal Oxidation.- Mechanical Stress Simulation During Gate Formation of MOS Devices Considering Crystallization-Induced Stress of p-Doped Silicon Thin Films.- Monte Carlo Simulation of Carrier-Carrier Interaction for Silicon Devices.- Monte Carlo MOSFET Simulator Including Inversion Layer Quantization.- Three-Dimensional Monte Carlo Simulation of Submicronic Devices.- Monte Carlo Analysis of Voltage Fluctuations in Two-Te...

Détails de l'édition

• Éditeur: Springer Verlag GmbH
• Date d'édition: 1993
• Langue: anglais
• ISBN 10: 3211825045
• ISBN 13: 9783211825044
• Reliure: Relié
• Nombre de pages: 524
• Éditeur: Selberherr Siegfried, Stippel Hannes, Strasser Ernst
• Coordonnées du fabricant: non disponible