Simulation of Semiconductor Devices and Processes: Volume 6 - Couverture rigide

Couverture rigide

ISBN 10 : 3211827366 ISBN 13 : 9783211827369

Editeur : Springer Verlag GmbH, 1995

Synopsis

Numerical Modelling and Materials Characterisation for Integrated Micro Electro Mechanical Systems.- Fast and Accurate Aerial Imaging Simulation for Layout Printability Optimization.- Efficient and Rigorous 3D Model for Optical Lithography Simulation.- Application of the Two-dimensional Numerical Simulation for the Description of Semiconductor Gas Sensors.- Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device Simulation.- Modeling of Magnetic-Field-Sensitive GaAs Devices Using 3D Monte Carlo Simulation.- Quasi Three-Dimensional Simulation of Heat Transport in Thermal-Based Microsensors.- Simulating Deep Sub-Micron Technologies: An Industrial Perspective.- An Improved Calibration Methodology for Modeling Advanced Isolation Technologies.- Algorithms for the Reduction of Surface Evolution Discretization Error.- Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation.- A Data-Model for a Technology and Simulation Archive.- A Programmable Tool for Interactive Wafer-State Level Data Processing.- Layout Design Rule Generation with TCAD Tools for Manufacturing.- ALAMODE: A Layered Model Development Environment.- TCAD Optimization Based on Task-Level Framework Services.- Cellular Automata Simulation of GaAs-IMPATT-Diodes.- Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States.- An Efficient Numerical Method to Solve the Time-Dependent Semiconductor Equations Including Trapped Charge.- Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices.- An Advanced Cellular Automaton Method with Interpolated Flux Scheme and its Application to Modeling of Gate Currents in Si MOSFETs.- Piezoresistance and the Drift-Diffusion Model in Strained Silicon.- A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors.- Ge Profile for Minimum Neutral Base Transit Time in Si/Si1-yGey Heteroj unction Bipolar Transistors.- Performance Optimization in Si/SiGe Heterostructure FETs.- On the Integral Representations of Electrical Characteristics in Si Devices.- Large Signal Frequency Domain Device Analysis Via the Harmonic Balance Technique.- A Method for Extracting the Threshold Voltage of MOSFETs Based on Current Components.- 2-D MOSFET Simulation by Self-Consistent Solution of the Boltzmann and Poisson Equations Using a Generalized Spherical Harmonic Expansion.- Ultra High Performance, Low Power 0.2 µm CMOS Microprocessor Technology and TCAD Requirements.- Viscoelastic Modeling of Titanium Silicidation.- Multidimensional Nonlinear Viscoelastic Oxidation Modeling.- Three-Dimensional Integrated Process Simulator: 3D-MIPS.- Effect of Process-Induced Mechanical Stress on Circuit Layout.- The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI.- Numerical and Analytical Modelling of Head Resistances of Diffused Resistors.- New Spreading Resistance Effect for Sub-0.50µm MOSFETs: Model and Simulation.- The Role of SEMATECH in Enabling Global TCAD Collaboration.- Three Dimensional Simulation for Sputter Deposition Equipment and Processes.- Comprehensive Reactor, Plasma, and Profile Simulator for Plasma Etch Processes.- Modeling the Wafer Temperature in a LPCVD Furnace.- Determination of Electronic States in Low Dimensional Heterostructure and Quantum Wire Devices.- An Exponentially Fitted Finite Element Scheme for Diffusion Process Simulation on Coarse Grids.- Achievement of Quantitatively Accurate Simulation of Ion-Irradiated Bipolar Power Devices.- Modeling of Substrate Bias Effect in Bulk and SOI SiGe-channel p-MOSFETs.- A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating An Accumulated Diffusion Lenght and its Application to the Design of Power MOSFETs.- Recovery of Vectorial Fields and Currents in Multidimensional Simulation.- An Efficient Approach to Solving The Boltzmann Transport Equation in Ultra-fast Trans

Détails de l'édition

• Éditeur: Springer Verlag GmbH
• Date d'édition: 1995
• ISBN 10: 3211827366
• ISBN 13: 9783211827369
• Reliure: Relié
• Langue: anglais
• Nombre de pages: 513
• Éditeur: Ryssel Heiner, Pichler Peter
• Coordonnées du fabricant: non disponible