Toward Quantum FinfET - Couverture rigide

Livre 13 sur 32: Lecture Notes in Nanoscale Science and Technology

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ISBN 10 : 331902020X ISBN 13 : 9783319020204

Editeur : Springer International Publishing AG, 2013

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This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, and tunneling transport.

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This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, and tunneling transport.

Les informations fournies dans la section � A propos du livre � peuvent faire r�f�rence � une autre �dition de ce titre.

�diteur: Springer International Publishing AG
Date d'�dition: 2013
Langue: anglais
ISBN 10: 331902020X
ISBN 13: 9783319020204
Reliure: Reli�
Nombre de pages: 374
�diteur: Han Weihua, Wang Zhiming M.
Coordonn�es du fabricant: ProductSafety@springernature.com
ProductSafety@springernature.com

Poststr. 9
Darmstadt
64293
Allemagne

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�tat : Tr�s bon

Zustand: Sehr gut | Seiten: 376...

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Toward Quantum FinFET (eng)

Han, Weihua

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ISBN 10 : 331902020X ISBN 13 : 9783319020204

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Toward Quantum FinFET (Lecture Notes in Nanoscale Science and Technology, 17)

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Toward Quantum FinFET

Zhiming M. Wang

Edit� par Springer International Publishing Dez 2013, 2013

ISBN 10 : 331902020X ISBN 13 : 9783319020204

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Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. 376 pp. Englisch. N� de r�f. du vendeur 9783319020204

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Toward Quantum FinFET

Han, Weihua|Wang, Zhiming M.

Edit� par Springer International Publishing, 2013

ISBN 10 : 331902020X ISBN 13 : 9783319020204

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Gebunden. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum Fi. N� de r�f. du vendeur 4496327

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Toward Quantum FinFET

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ISBN 10 : 331902020X ISBN 13 : 9783319020204

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Etat : New. pp. xi + 363. N� de r�f. du vendeur 2697860136

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Toward Quantum FinFET

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Etat : New. Print on Demand pp. xi + 363 235 Illus. (168 Col.). N� de r�f. du vendeur 94537207

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Toward Quantum FinFET

Wang Zhiming M. Han Weihua

Edit� par Springer, 2013

ISBN 10 : 331902020X ISBN 13 : 9783319020204

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Vendeur : Biblios, Frankfurt am main, HESSE, Allemagne

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Etat : New. PRINT ON DEMAND pp. xi + 363. N� de r�f. du vendeur 1897860130

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Toward Quantum FinFET

Weihua Han

Edit� par Springer, Springer Dez 2013, 2013

ISBN 10 : 331902020X ISBN 13 : 9783319020204

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Buch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design.Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effectProvides the keys to understanding the emerging area of the quantum FinFETWritten by leading experts in each research areaDescribes a key enabling technology for research and development of nanofabrication and nanoelectronic devicesSpringer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 376 pp. Englisch. N� de r�f. du vendeur 9783319020204

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Toward Quantum Finfet

Han, Weihua (Editor)/ Wang, Zhiming M. (Editor)

Edit� par Springer Verlag, 2013

ISBN 10 : 331902020X ISBN 13 : 9783319020204

Neuf Couverture rigide

Vendeur : Revaluation Books, Exeter, Royaume-Uni

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Hardcover. Etat : Brand New. 2013 edition. 390 pages. 9.25x6.25x1.00 inches. In Stock. N� de r�f. du vendeur x-331902020X

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Toward Quantum FinFET

Zhiming M. Wang

Edit� par Springer International Publishing, 2013

ISBN 10 : 331902020X ISBN 13 : 9783319020204

Neuf Couverture rigide

Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne

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Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. N� de r�f. du vendeur 9783319020204

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